Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occ...
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occ...
Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized ...
Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized ...
Ab initio-derived correlations for defect-dopant interactions in electronic materials
Appl. Phys. Lett. 95, 172104 (2009); doi:10.1063/1.3254227
Published 28 October 2009
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This letter describes a parameter-free, simulation-free route to predict dopant-defect energetics under given hydrostatic strained silicon lattices using readily available physical constants such as electronegativity and size, and dimensionless correlations derived from density functional theory calculations. Illustration of the effectiveness of these correlations to predict the behavior of dopant materials is shown for strained SiGe materials. As a more stringent test of the reliability of the correlations and their ability to extend beyond the SiGe materials, we also demonstrate the accuracy of these correlations for the prediction of dopant energetics for other classes of electronic materials, such as the III/V material, GaAs.
©2009 American Institute of Physics
| History: | Received 16 April 2009; accepted 22 September 2009; published 28 October 2009 |
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http://link.aip.org/link/?APPLAB/95/172104/1 |
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KEYWORDS and PACS
ab initio calculations,
density functional theory,
electronegativity,
gallium arsenide,
III-V semiconductors,
semiconductor doping,
silicon compounds
- 71.15.Mb
Density functional theory, local density approximation, gradient and other corrections (condensed matter electronic structure) - 71.55.Eq
Impurity and defect levels in III-V semiconductors - 61.72.Yx
Interaction between different crystal defects - 61.72.uf
Doping and impurity implantation in germanium and silicon - 61.72.uj
Doping and impurity implantation in III-V and II-VI semiconductors - YEAR: 2009
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0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (11)
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