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Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Appl. Phys. Lett. 95, 172105 (2009); doi:10.1063/1.3254329

Published 28 October 2009

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T. Shen,1,2 J. J. Gu,1 M. Xu,1 Y. Q. Wu,1 M. L. Bolen,1 M. A. Capano,1 L. W. Engel,3 and P. D. Ye1
1School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
2Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA
3National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov–de Haas oscillations in diagonal magnetoresistance of gated epitaxial graphene on SiC (0001). ©2009 American Institute of Physics
History: Received 26 August 2009; accepted 6 October 2009; published 28 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/172105/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.43.-f
    Quantum Hall effects
  • 72.20.My
    Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)
  • 68.55.aj
    Insulator thin film nucleation and growth
  • 81.15.Gh
    Chemical vapor deposition
  • 73.61.Ng
    Electrical properties of insulators (thin films)
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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