In situ probing of electromechanical properties of an individual ZnO nanobelt
Appl. Phys. Lett. 95, 172106 (2009); doi:10.1063/1.3241075
Published 29 October 2009
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We report here, an investigation on electrical and structural-microstructural properties of an individual ZnO nanobelt via in situ transmission electron microscopy using an atomic force microscopy (AFM) system. The I-V characteristics of the ZnO nanobelt, just in contact with the AFM tip indicates the insulating behavior, however, it behaves like a semiconductor under applied stress. Analysis of the high resolution lattice images and the corresponding electron diffraction patterns shows that each ZnO nanobelt is a single crystalline, having wurtzite hexagonal structure (a=0.324 nm, c=0.520 66 nm) with a general growth direction of [10
0].
©2009 American Institute of Physics
| History: | Received 12 August 2009; accepted 1 September 2009; published 29 October 2009 |
| Permalink: |
http://link.aip.org/link/?APPLAB/95/172106/1 |
KEYWORDS and PACS
atomic force microscopy,
electrical conductivity,
electron diffraction,
II-VI semiconductors,
nanobelts,
piezoelectricity,
transmission electron microscopy,
wide band gap semiconductors,
zinc compounds
- 73.63.Bd
Nanocrystalline materials (electronic transport) - 72.20.-i
Electrical conductivity phenomena in semiconductors and insulators - 72.80.Ey
Electrical conductivity of III-V and II-VI semiconductors - 77.65.-j
Piezoelectricity and electromechanical effects - 61.46.Df
Structure of nanocrystals and nanoparticles - YEAR: 2009
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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