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Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching

Appl. Phys. Lett. 95, 172107 (2009); doi:10.1063/1.3255014

Published 29 October 2009

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Liang Wang, Dong-Hyun Kim, and Ilesanmi Adesida
Department of Materials Science and Engineering and Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois, Urbana, Illinois 61801, USA
The effects of recess etching of the Ohmic contact area on the performance of Ti/Al/Mo/Au metallization and its interfacial reactions with AlGaN/AlN/GaN epilayers were investigated. The best Ohmic contact performances of 0.31, 0.41, and 0.26  Omega mm for three epilayers from two different sources were obtained only when the two-dimensional electron gas (2DEG) channels were completely removed under the Ohmic contact metallization. This is due to the direct sideway contact made by the electrode to the 2DEG around the edges of the active-layer mesas or pads; this is believed to be a more efficient carrier transport mechanism than tunneling through the AlGaN barrier. ©2009 American Institute of Physics
History: Received 20 July 2009; accepted 23 September 2009; published 29 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/172107/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Kp
    Electrical properties of III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
  • 73.40.Ns
    Electrical properties of metal-nonmetal contacts
  • 81.65.Cf
    Surface cleaning, etching, patterning
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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