Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching
The effects of recess etching of the Ohmic contact area on the performance of Ti/Al/Mo/Au metallization and its interfacial reactions with AlGaN/AlN/GaN epilayers were investigated. The best Ohmic con...
The effects of recess etching of the Ohmic contact area on the performance of Ti/Al/Mo/Au metallization and its interfacial reactions with AlGaN/AlN/GaN epilayers were investigated. The best Ohmic con...
A pathway to p-type wide-band-gap semiconductors
Based on first-principles calculations we devise an alternative approach to p-type doping in AlN, ZnO, and ZnMgO. Instead of searching for acceptors on the left of the host atoms in the Periodic Table...
Based on first-principles calculations we devise an alternative approach to p-type doping in AlN, ZnO, and ZnMgO. Instead of searching for acceptors on the left of the host atoms in the Periodic Table...
Controlled generation of resonant electron-electron scattering induced current in quantum well structures
Appl. Phys. Lett. 95, 172108 (2009); doi:10.1063/1.3256198
Published 29 October 2009
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Current voltage measurements on samples designed for the resonant excitation of intersubband plasmons are reported. These resonances which represent collective electron-electron scattering processes contribute a significant amount to the total current under controlled bias conditions. Measurements with applied magnetic field give additional evidence for the resonant mechanism when the cyclotron energy (or multiples of it) matches the subband splitting.
©2009 American Institute of Physics
| History: | Received 6 August 2009; accepted 8 October 2009; published 29 October 2009 |
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