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A pathway to p-type wide-band-gap semiconductors

Appl. Phys. Lett. 95, 172109 (2009); doi:10.1063/1.3247890

Published 30 October 2009

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Anderson Janotti, Eric Snow, and Chris G. Van de Walle
Department of Materials, University of California, Santa Barbara, California 93106-5050, USA
Based on first-principles calculations we devise an alternative approach to p-type doping in AlN, ZnO, and ZnMgO. Instead of searching for acceptors on the left of the host atoms in the Periodic Table, we propose to search on the far right. We find that F placed at interstitial sites in AlN, ZnO, and ZnMgO acts as a shallow acceptor, leaving a hole in an effective-mass state near the valence-band maximum. We investigate the stability of F impurities and propose a procedure to selectively introduce F in the interstitial lattice sites of the above wide-band-gap semiconductors. ©2009 American Institute of Physics
History: Received 15 September 2009; accepted 23 September 2009; published 30 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/172109/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.72.uj
    Doping and impurity implantation in III-V and II-VI semiconductors
  • 71.15.-m
    Methods of electronic structure calculations (condensed matter)
  • 71.18.+y
    Fermi surface: calculations and measurements; effective mass, -g factor
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • 61.72.jj
    Interstitials
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (24)
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