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Magnetic remanent states and quasistatic switching behavior of Fe split-rings for spin field-effect-transistor applications

Appl. Phys. Lett. 95, 172505 (2009); doi:10.1063/1.3257360

Published 28 October 2009

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J. H. Lee,1 S. N. Holmes,2 B. Hong,1 P. E. Roy,1 M. D. Mascaro,3 T. J. Hayward,1 D. Anderson,1 K. Cooper,1 G. A. C. Jones,1 M. E. Vickers,4 C. A. Ross,3 and C. H. W. Barnes1
1Department of Physics, Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE, United Kingdom
2Toshiba Research Europe Limited, Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom
3Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
4Department of Materials Science and Metallurgy, University of Cambridge, Pembroke St, Cambridge CB2 3QZ, United Kingdom
The magnetic remanent states and switching behavior of Fe thin-film split-rings are investigated using magnetic force microscopy, magnetoresistance measurements, and micromagnetic simulations in order to assess their suitability as spin-filter contacts for spin field-effect-transistors. The gaps between the two halves of each ring are found to absorb then emit domain walls and act as pinning sites for “virtual” domain walls so that the observed switching mechanisms are similar to those of continuous rings. It is shown that these rings offer advantages over rectangular spin-filter contacts owing to their reduced stray fields and easy accessibility of the necessary magnetic states. ©2009 American Institute of Physics
History: Received 30 July 2009; accepted 7 October 2009; published 28 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/172505/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 75.60.Ch
    Magnetic domain walls and domain structure
  • 72.20.My
    Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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