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Room temperature ferromagnetism in nanostructured ZnO–Al system

Appl. Phys. Lett. 95, 172507 (2009); doi:10.1063/1.3254224

Published 28 October 2009

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S. J. Chen,1 K. Suzuki,1 and J. S. Garitaonandia2
1Department of Materials Engineering, Monash University, Clayton, Victoria 3800, Australia
2Zientzia eta Teknologia Fakultatea, Euskal Herriko Unibertsitatea, 644pk. 48820 Bilbao, Spain
The origin of the room-temperature ferromagnetism (RTF) in ZnO-based dilute magnetic semiconductors remains controversial. We experimentally demonstrate here that it is possible to induce RTF in ball milled (ZnO)1−x/Alx without any ferromagnetic dopant. Our work shows that RTF in (ZnO)1−x/Alx (x=0–0.5) can be realized simply by milling a mixture of high purity ZnO and Al fine powders for 8 h. The spontaneous magnetization of the milled powders is found to increase by annealing under a reduced pressure. The magnetization value depends highly on both the ratio of Al to ZnO and the annealing temperature. X-ray photoelectron spectroscopy results have revealed that the Zn2+ ions in (ZnO)1−x/Alx are partially reduced into a lower ionic state. As there are no magnetic impurities present in our samples, the origin of ferromagnetism is most likely to be due to the charge transfer between Zn and Al at the interfaces of the ball milled nanograins. Our results reinforce the significant role played by the alterations of the electronic structures in the RTF of ZnO. ©2009 American Institute of Physics
History: Received 24 September 2009; accepted 29 September 2009; published 28 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/172507/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.60.Ej
    Magnetization curves, hysteresis, Barkhausen and related effects
  • 73.20.At
    Surface states, band structure, electron density of states
  • 81.40.Gh
    Other heat and thermomechanical treatments
  • 79.60.-i
    Photoemission and photoelectron spectra (condensed matter)
  • 75.70.Cn
    Magnetic properties of interfaces
  • 75.50.Pp
    Magnetic semiconductors
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (17)
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  1. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
  2. S. S. Kim, J. H. Moon, B. Lee, O. S. Song, and J. H. Je, J. Appl. Phys. 95, 454 (2004).
  3. S. W. Jung, S. -J. An, G. -C. Yi, C. U. Jung, S. -I. Lee, and S. Cho, Appl. Phys. Lett. 80, 4561 (2002).
  4. T. Fukumura, Z. W. Jin, M. Kawasaki, T. Shono, T. Hasegawa, S. Koshihara, and H. Koinuma, Appl. Phys. Lett. 78, 958 (2001).
  5. J. M. D. Coey, M. Venkatesan, and C. B. Fitzgerald, Nature Mater. 4, 173 (2005).
  6. A. B. Mahmoud, H. J. von Bardeleben, J. L. Cantin, A. Mauger, E. Chikoidze, and Y. Dumont, Phys. Rev. B 74, 115203 (2006).
  7. D. C. Kundaliya, S. B. Ogale, S. E. Lofland, S. Dhar, C. J. Metting, S. R. Shinde, Z. Ma, B. Varughese, K. V. Ramanujachary, L. Salamanca-Riba, and T. Venkatesan, Nature Mater. 3, 709 (2004).
  8. G. Lawes, A. S. Risbud, A. P. Ramirez, and R. Seshadri, Phys. Rev. B 71, 045201 (2005).
  9. J. M. D. Coey, W. Kwanruthai, J. Alaria, and M. Venkatesan, J. Phys. D: Appl. Phys. 41, 134012 (2008).
  10. S. R. Shinde, S. B. Ogale, J. S. Higgins, H. Zheng, A. J. Millis, V. N. Kulkarni, R. Ramesh, R. L. Greene, and T. Venkatesan, Phys. Rev. Lett. 92, 166601 (2004).
  11. K. R. Kittilstved and D. R. Gamelin, J. Am. Chem. Soc. 127, 5292 (2005).
  12. K. R. Kittilstved, N. S. Norberg, and D. R. Gamelin, Phys. Rev. Lett. 94, 147209 (2005).
  13. D. Rubi, J. Fontcuberta, A. Calleja, Ll. Aragones, X. G. Capdevila, and M. Segarra, Phys. Rev. B 75, 155322 (2007).
  14. Y. W. Ma, J. B. Yi, J. Ding, L. H. Van, H. T. Zhang, and C. M. Ng, Appl. Phys. Lett. 93, 042514 (2008).
  15. Y. W. Ma, J. Ding, D. C. Qi, J. B. Yi, H. M. Fan, H. Gong, A. T. S. Wee, and A. Rusydi, Appl. Phys. Lett. 95, 072501 (2009).
  16. J. S. Garitaonandia, M. Insausti, E. Goikolea, M. Suzuki, J. D. Cashion, N. Kawamura, H. Ohsawa, I. G. Muro, K. Suzuki, F. Plazaola, and T. Rojo, Nano Lett. 8, 661 (2008).
  17. M. A. Garcia, J. M. Merino, E. F. Pinel, A. Quesada, J. de la Venta, M. L. Ruız Gonzalez, G. R. Castro, P. Crespo, J. Llopis, J. M. Gonzalez-Calbet, and A. Hernando, Nano Lett. 7, 1489 (2007).

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