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Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor

Appl. Phys. Lett. 95, 172514 (2009); doi:10.1063/1.3257733

Published 30 October 2009

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Yong Chan Cho,1 Sung-Jin Kim,1 Seunghun Lee,1 Su Jae Kim,1 Chae Ryong Cho,1 Ho-Hyun Nahm,2 Chul Hong Park,3 Il Kyoung Jeong,3 Sungkyun Park,4 Tae Eun Hong,5 Shinji Kuroda,6 and Se-Young Jeong7
1Department of Nano Fusion Technology, Pusan National University, Miryang 627-706, Republic of Korea
2Center of Excellency for Developing Physics Researchers, Pusan National University, Busan 609-735, Republic of Korea
3Department of Physics Education, Pusan National University, Busan 609-735, Republic of Korea
4Department of Physics, Pusan National University, Busan 609-735, Republic of Korea
5Busan Center, Korea Basic Science Institute, Pusan National University, Busan 609-735, Republic of Korea
6Institute of Materials Science, University of Tsukuba, Tsukuba 305-8573, Japan
7Department of Cogno-Mechatronics Engineering, Pusan National University, Miryang 627-706, Republic of Korea
We report a reversible manipulation of short-range spin ordering in Co-doped ZnO through hydrogenation and dehydrogenation processes. In both magnetic-circular dichroism and superconducting quantum interference device measurements, the ferromagnetism was clearly induced and removed by the injection and ejection of hydrogen, respectively. The x-ray photoelectron spectroscopy results and the first-principles electronic structure calculations consistently support the dependence of the ferromagnetism on the hydrogen position and the contribution of transition metal ions. The results suggest the ferromagnetic interaction between Co ions can be reversibly controlled by the hydrogen-mediated intrinsic spin ordering in Co doped ZnO. ©2009 American Institute of Physics
History: Received 6 October 2009; accepted 11 October 2009; published 30 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/172514/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.20.Ls
    Magnetooptical effects (bulk materials/thin films)
  • 61.72.uj
    Doping and impurity implantation in III-V and II-VI semiconductors
  • 81.05.Dz
    II-VI semiconductors: fabrication, treatment, testing and analysis
  • 78.66.Hf
    Optical properties of II-VI semiconductors (thin films)
  • 79.60.Bm
    Photoelectron spectra of clean metal, semiconductor, and insulator surfaces
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • 81.15.Cd
    Deposition by sputtering
  • 75.60.Ej
    Magnetization curves, hysteresis, Barkhausen and related effects
  • 75.70.Ak
    Magnetic properties of monolayers and thin films
  • 75.50.Dd
    Nonmetallic ferromagnetic materials
  • 75.50.Pp
    Magnetic semiconductors
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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