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Dynamics of self-assembled droplet etching

Appl. Phys. Lett. 95, 173110 (2009); doi:10.1063/1.3254216

Published 28 October 2009

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Ch. Heyn, A. Stemmann, and W. Hansen
Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Jungiusstraße 11, D-20355 Hamburg, Germany
We study the self-assembled local droplet etching of nanoholes in AlGaAs surfaces with Ga droplets. The data establish an unexpected delay of both the hole drilling process as well as the removal of the liquid material after etching. Furthermore, coarsening by Ostwald ripening is found to reduce the droplet density before drilling. Basing on these findings, we propose a growth, coarsening, drilling, and removal mechanism for the droplet etching process. ©2009 American Institute of Physics
History: Received 30 July 2009; accepted 4 October 2009; published 28 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/173110/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.16.Dn
    Self-assembly in nanofabrication and processing
  • 81.65.Cf
    Surface cleaning, etching, patterning
  • 68.47.Fg
    Semiconductor surfaces
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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