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Growth of ultrathin film aluminum oxide on Ag(111)

Appl. Phys. Lett. 95, 173111 (2009); doi:10.1063/1.3251778

Published 28 October 2009

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S. Vizzini,1 H. Oughaddou,1,2 J. Y. Hoarau,3 J. P. Bibérian,3 and B. Aufray3
1CEA, IRAMIS, SPCSI, SIMA, F-91191, Gif sur Yvette Cedex, France
2Université de Cergy-Pontoise, LAMAP, F-95031 Cergy-Pontoise Cedex, France
3CINAM-CNRS, Case 913, 13288 Marseille Cedex 09, France
Scanning tunneling microscopy (STM) and spectroscopy and electron energy loss spectroscopy were used to characterize ultrathin epitaxial aluminum oxide on Ag(111) which was prepared via a specific deposition and oxidation process. Atomically resolved STM images show self-organized oxide stripes of 4 nm width with excellent homogeneity in depth and chemical composition properties which are crucial for applications of this oxide to magnetic tunnel junctions. We also found that electrons tunnel easily through the oxide film. This oxide has a different spectroscopic signature from that of alumina and has a wide bandgap close to 6.6 eV. ©2009 American Institute of Physics
History: Received 25 August 2009; accepted 23 September 2009; published 28 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/173111/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.aj
    Insulator thin film nucleation and growth
  • 68.37.Ef
    Scanning tunneling microscopy of surfaces, interfaces and thin films
  • 81.15.Ef
    Vacuum deposition
  • 81.15.Gh
    Chemical vapor deposition
  • 71.20.Ps
    Electronic structure of other crystalline inorganic compounds
  • 75.70.Cn
    Magnetic properties of interfaces
  • 81.65.Mq
    Surface oxidation
  • 79.20.Uv
    Electron energy loss spectroscopy
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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