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Determining surface Fermi level pinning position of InN nanowires using electrolyte gating

Appl. Phys. Lett. 95, 173114 (2009); doi:10.1063/1.3255010

Published 30 October 2009

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D. R. Khanal,1,2 W. Walukiewicz,2 J. Grandal,3 E. Calleja,3 and J. Wu1,2
1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
2Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
3Department of Ingeniería Electrónica-ISOM, Universidad Politécnica, Ciudad Universitaria, Madrid, Spain
We demonstrate quantitative determination of surface Fermi level pinning position in InN nanowires using polymer electrolyte gating and three-dimensional (3D) electrostatic modeling of charge distribution. We find pinning of the Fermi level 0.6–0.7 eV above the conduction band minimum at the surface of the nanowires. After taking into account the Fermi level pinning, doping concentration and carrier mobilities are also evaluated and compared with InN thin films. This general approach of combining electrolyte gating experiments with 3D numerical modeling can be applied to nanowires of other materials to determine their surface Fermi level pinning position. ©2009 American Institute of Physics
History: Received 29 July 2009; accepted 6 October 2009; published 30 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/173114/1
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KEYWORDS and PACS

Keywords
PACS
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • 73.50.Dn
    Low-field transport and mobility; piezoresistance (thin films)
  • 61.72.uj
    Doping and impurity implantation in III-V and II-VI semiconductors
  • 73.20.At
    Surface states, band structure, electron density of states
  • 73.61.Ey
    Electrical properties of III-V semiconductors (thin films)
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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