Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
Search:
   
 
 
 
Previous Article
The effect of UV ozone treatment on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
The interface between ultraviolet (UV) ozone treated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and N,N-diphenyl-N,N-bis-(1-naphthyl)-1-1-biphenyl-4,4-diamine (-NPD) was inves...
Next Article
Photocurrent enhancement in polymer:fullerene bulk heterojunction solar cells doped with a phosphorescent molecule
We demonstrate photocurrent enhancement of up to 20% in polymer:fullerene bulk heterojunction photovoltaic cells via the incorporation of a phosphorescent dopant, without degradation in the open-circu...

Electronegativity equalization model for interface barrier formation at reactive metal/organic contacts

Appl. Phys. Lett. 95, 173303 (2009); doi:10.1063/1.3253709

Published 29 October 2009

You are logged in to this journal.

J. X. Tang,1,2 Y. Q. Li,1,2 S. D. Wang,1 C. S. Lee,2 and S. T. Lee2
1Functional Nano and Soft Materials Laboratory (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, People's Republic of China
2Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, China
A general model based on electronegativity equalization method (EEM) is proposed for a quantitative formulation of barrier formation at reactive metal/organic interfaces. The present model predicts for molecular bonding formation a linear dependence of barrier heights on the degree of partial charge transfer, which is determined by the electronegativity difference between metals and molecules. Also, the calculated barrier heights show good agreement with the empirical values. It suggests that the EEM-based electronegativity model has captured the essence of barrier formation at reactive metal/organic interfaces, and that electronegativity is a fundamental factor in characterizing the chemical trend of barrier heights. ©2009 American Institute of Physics
History: Received 1 September 2009; accepted 25 September 2009; published 29 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/173303/1
FULL TEXT OPTIONS   (FREE)
Download HTML Download Sectioned HTML Download PDF (149 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 73.40.Ns
    Electrical properties of metal-nonmetal contacts
  • 71.20.Rv
    Electronic structure of polymers and organic compounds
  • 62.20.Qp
    Friction, tribology and hardness
  • 68.35.Gy
    Mechanical properties and surface strains of solid surfaces and interfaces
  • 81.40.Np
    Fatigue, embrittlement, fracture and failure
  • YEAR: 2009

RELATED DATABASES

Web of Science

View this record in Web of Science

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (23)
View in Separate Window/Tab
  1. C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).
  2. A. Kahn, N. Koch, and W. Gao, J. Polym. Sci., Part B: Polym. Phys. 41, 2529 (2003).
  3. W. R. Salaneck, M. Lögdlund, M. Fahlman, G. Greczynski, and Th. Kugler, Mater. Sci. Eng., R. 34, 121 (2001). [Inspec] [ISI]
  4. J. X. Tang, Y. C. Zhou, Z. T. Liu, C. S. Lee, and S. T. Lee, Appl. Phys. Lett. 93, 043512 (2008).
  5. H. Kanno, R. J. Holmes, Y. Sun, S. Kena-Cohen, and S. R. Forrest, Adv. Mater. 18, 339 (2006).
  6. H. Ishii, K. Sugiyama, E. Ito, and K. Seki, Adv. Mater. 11, 605 (1999).
  7. M. G. Mason, C. W. Tang, L. S. Hung, P. Raychaudhuri, J. Madathil, D. J. Giesen, L. Yan, Q. T. Le, Y. Gao, S. T. Lee, L. S. Liao, L. F. Cheng, W. R. Salaneck, D. A. dos Santos, and J. L. Brédas, J. Appl. Phys. 89, 2756 (2001).
  8. X. Crispin, V. Geskin, A. Crispin, J. Cornil, R. Lazzaroni, W. R. Salaneck, and J. L. Bredas, J. Am. Chem. Soc. 124, 8131 (2002). [MEDLINE]
  9. J. X. Tang, C. S. Lee, and S. T. Lee, Appl. Phys. Lett. 87, 252110 (2005).
  10. L. Yan, N. J. Watkins, S. Zorba, Y. Gao, and C. W. Tang, Appl. Phys. Lett. 81, 2752 (2002).
  11. P. S. Bagus, V. Staemmler, and C. Wöll, Phys. Rev. Lett. 89, 096104 (2002). [MEDLINE]
  12. J. Hwang, A. Wan, and A. Khan, Mater. Sci. Eng., R. 64, 1 (2009).
  13. S. Kera, Y. Yabuuchi, H. Yamane, H. Setoyama, K. K. Okudaira, A. Kahn, and N. Ueno, Phys. Rev. B 70, 085304 (2004).
  14. H. Fukagawa, H. Yamane, S. Kera, K. K. Okudaira, and N. Ueno, Phys. Rev. B 73, 041302(R) (2006).
  15. C. S. Lee, J. X. Tang, Y. C. Zhou, and S. T. Lee, Appl. Phys. Lett. 94, 113304 (2009).
  16. J. X. Tang, C. S. Lee, and S. T. Lee, Appl. Surf. Sci. 252, 3948 (2006). [Inspec]
  17. H. Vazquez, W. Gao, F. Flores, and A. Kahn, Phys. Rev. B 71, 041306(R) (2005).
  18. J. X. Tang, C. S. Lee, S. T. Lee, and Y. B. Xu, Chem. Phys. Lett. 396, 92 (2004).
  19. P. Geerlings, F. D. Proft, and W. Langenaeker, Chem. Rev. 103, 1793 (2003). [ISI] [MEDLINE]
  20. I. G. Hill, A. Kahn, Z. G. Soos, and R. A. Pascal, Jr., Chem. Phys. Lett. 327, 181 (2000).
  21. L. S. Liao, L. F. Cheng, M. K. Fung, C. S. Lee, S. T. Lee, M. Inbasekaran, E. P. Woo, and W. W. Wu, Phys. Rev. B 62, 10004 (2000). [ISI]
  22. I. H. Campbell, T. W. Hagler, D. L. Smith, and J. P. Ferraris, Phys. Rev. Lett. 76, 1900 (1996). [MEDLINE]
  23. R. E. Watson, L. H. Bennett, and J. W. Davenport, Phys. Rev. B 27, 6428 (1983). [ISI]






Copyright © American Institute of Physics