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Fabrication and characterization of InGaN p-i-n homojunction solar cell

Appl. Phys. Lett. 95, 173504 (2009); doi:10.1063/1.3254215

Published 28 October 2009

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Xiao-mei Cai,1 Sheng-wei Zeng,1 and Bao-ping Zhang1,2
1Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, Fujian, People's Republic of China
2Pen-Tung Sah Micro-Nano Technology Research Center, Xiamen University, Xiamen 361005, Fujian, People's Republic of China
InxGa1-xN p-i-n homojunction solar cells with different In content are studied. The measured open circuit voltages (Voc) are 2.24, 1.34, and 0.96 V, for x=0.02, 0.12, and 0.15, respectively. By comparing the x-ray rocking curves, the I-V characteristics and the external quantum efficiencies, it's demonstrated that the deterioration of InGaN crystal quality for larger In contents causes the decrease of Voc. The result demonstrates that reduction of defect is a key factor in the fabrication of nitride solar cell. ©2009 American Institute of Physics
History: Received 24 July 2009; accepted 5 October 2009; published 28 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/173504/1
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