Fabrication and characterization of InGaN p-i-n homojunction solar cell
InxGa1-xN p-i-n homojunction solar cells with different In content are studied. The measured open circuit voltages (Voc) are 2.24, 1.34, and 0.96 V, for x=0.02, 0.12, and 0.15, respectively. By compar...
InxGa1-xN p-i-n homojunction solar cells with different In content are studied. The measured open circuit voltages (Voc) are 2.24, 1.34, and 0.96 V, for x=0.02, 0.12, and 0.15, respectively. By compar...
Fabrication of large addition energy quantum dots in graphene
We present a simple technique to fabricate graphene quantum dots in a cryostat. It relies upon the controlled rupture of a suspended graphene sheet subjected to the application of a large electron cur...
We present a simple technique to fabricate graphene quantum dots in a cryostat. It relies upon the controlled rupture of a suspended graphene sheet subjected to the application of a large electron cur...
Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate
Appl. Phys. Lett. 95, 173505 (2009); doi:10.1063/1.3254719
Published 28 October 2009
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We report the growth and characterization of long wavelength infrared type-II InAs/GaSb superlattice photodiodes with a 50% cut-off wavelength at 11 µm, on GaAs substrate. Despite a 7.3% lattice mismatch to the substrate, photodiodes passivated with polyimide exhibit an R0A value of 35 
cm2 at 77 K, which is in the same order of magnitude as reference devices grown on native GaSb substrate. With a reverse applied bias less than 500 mV, the dark current density and differential resistance-area product are close to that of devices on GaSb substrate, within the tolerance of the processing and measurement. The quantum efficiency attains the expected value of 20% at zero bias, resulting in a Johnson limited detectivity of 1.1×1011 Jones. Although some difference in performances is observed, devices grown on GaAs substrate already attained the background limit performance at 77 K with a 300 K background and a 2
field of view.
©2009 American Institute of Physics
cm2 at 77 K, which is in the same order of magnitude as reference devices grown on native GaSb substrate. With a reverse applied bias less than 500 mV, the dark current density and differential resistance-area product are close to that of devices on GaSb substrate, within the tolerance of the processing and measurement. The quantum efficiency attains the expected value of 20% at zero bias, resulting in a Johnson limited detectivity of 1.1×1011 Jones. Although some difference in performances is observed, devices grown on GaAs substrate already attained the background limit performance at 77 K with a 300 K background and a 2 field of view.
©2009 American Institute of Physics
| History: | Received 20 August 2009; accepted 5 October 2009; published 28 October 2009 |
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