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Fabrication of large addition energy quantum dots in graphene

Appl. Phys. Lett. 95, 173506 (2009); doi:10.1063/1.3243690

Published 28 October 2009

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J. Moser and A. Bachtold
CIN2 (CSIC-ICN) Barcelona, Campus UAB, E-08193 Bellaterra, Spain
We present a simple technique to fabricate graphene quantum dots in a cryostat. It relies upon the controlled rupture of a suspended graphene sheet subjected to the application of a large electron current. This results in the in situ formation of a clean and ultranarrow constriction, which hosts one quantum dot and occasionally a few quantum dots in series. Conductance spectroscopy indicates that individual quantum dots can possess an addition energy as large as 180 meV. Our technique has several assets: (i) the dot is suspended, thus the electrostatic influence of the substrate is reduced, and (ii) contamination is minimized, since the edges of the dot have only been exposed to the vacuum in the cryostat. ©2009 American Institute of Physics
History: Received 31 July 2009; accepted 15 September 2009; published 28 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/173506/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.07.Ta
    Quantum dots: fabrication and characterization
  • 61.46.Df
    Structure of nanocrystals and nanoparticles
  • 81.16.-c
    Methods of nanofabrication and processing
  • 82.70.Kj
    Emulsions and suspensions
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (22)
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