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Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes

Appl. Phys. Lett. 95, 173507 (2009); doi:10.1063/1.3257368

Published 29 October 2009

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M. Meneghini,1 N. Trivellin,1 M. Pavesi,2 M. Manfredi,2 U. Zehnder,3 B. Hahn,3 G. Meneghesso,1 and E. Zanoni1
1Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy
2Department of Physics and INFM, University of Parma, Parco Area delle Scienze 7/A, 43100 Parma, Italy
3OSRAM Opto Semiconductors GmbH, Leibnitzstrasse 4, 93055 Regensburg, Germany
This paper reports an electro-optical analysis of the correlation between reverse-bias leakage current and luminescence in light-emitting diodes based on InGaN. The results of the analysis suggest that (i) the main mechanism responsible for leakage current conduction is tunneling, (ii) leakage current is correlated with the presence of reverse-bias luminescence, (iii) leakage current flows through preferential paths, that can be identified by means of emission microscopy, and (iv) reverse-bias luminescence could be ascribed to the recombination of electron-hole pairs in the quantum well region. ©2009 American Institute of Physics
History: Received 27 April 2009; accepted 8 October 2009; published 29 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/173507/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Jb
    Light-emitting devices
  • 42.79.-e
    Optical elements, devices, and systems
  • YEAR: 2009

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ISSN:
0003-6951 (print)   1077-3118 (online)
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