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Resistance of diamond (100) to hyperthermal atomic oxygen attack

Appl. Phys. Lett. 95, 174106 (2009); doi:10.1063/1.3251789

Published 29 October 2009

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Z. Shpilman,1,2 I. Gouzman,1 E. Grossman,1 L. Shen,3 T. K. Minton,3 and A. Hoffman4
1Space Environment Section, Soreq NRC, Yavne 81800, Israel
2Department of Physics, Technion, Haifa 32000, Israel
3Department of Chemistry and Biochemistry, Montana State University, Bozeman, Montana 59717, USA
4Schulich Faculty of Chemistry, Technion, Haifa 32000, Israel
The morphology of polycrystalline chemical vapor deposited (CVD) diamond films following the interaction with hyperthermal (~5  eV) atomic oxygen (AO) was studied by atomic force microscopy. Selective etching of the (111) diamond facets occurred, while the (100) facets showed high endurance. The observed phenomenon is associated with the AO chemisorption energies on the various diamond facets. Only facets having an AO chemisorption energy lower than that of the incident AO were etched. AO is the dominant neutral component of the low-Earth-orbital environment; therefore, highly durable materials for space applications may be produced by utilizing diamond directional growth. ©2009 American Institute of Physics
History: Received 27 July 2009; accepted 20 September 2009; published 29 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/174106/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.15.Gh
    Chemical vapor deposition
  • 68.43.Mn
    Adsorption kinetics
  • 81.65.Cf
    Surface cleaning, etching, patterning
  • 68.37.Ps
    Atomic force microscopy (AFM) of surfaces, interfaces and thin films
  • 68.55.at
    Thin film nucleation and growth in other materials
  • 81.05.Uw
    Carbon, diamond, graphite: fabrication, treatment, testing and analysis
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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