Applied Physics Letters
Search:
   
 
 
 
Previous Article
The surface activation layer of GaAs negative electron affinity photocathode activated by Cs, Li, and NF3
The lifetime of GaAs photocathodes can be greatly improved by introducing Li in the Cs+NF3 activation process. The surface activation layer of such photocathodes is studied by synchrotron radiation ph...
Next Article
Erratum: “Electroconductance in single-wall carbon nanotubes” [Appl. Phys. Lett. 95, 032111 (2009)]

Comment on “Comparison of air breakdown and substrate injection as mechanisms to induce dielectric charging in microelectromechanical switches” [Appl. Phys. Lett. 92, 043502 (2008)]

Appl. Phys. Lett. 95, 176101 (2009); doi:10.1063/1.3255008

Published 29 October 2009

You are logged in to this journal.

Zbigniew Olszewski, Conor O'Mahony, Ruth Houlihan, and Russell Duane
Tyndall National Institute, Lee Maltings, Prospect Row, Cork, Ireland
The purpose of this comment is to provide additional insight into the reliability of microelectromechanical capacitive switches (MEMSs) investigated by Molinero and Castañer [Appl. Phys. Lett. 92, 043502 (2008)]. We show that the presence or absence of ambient humidity determines whether the shift in the capacitance-voltage (C-V) curve of oxide-based MEMS occurs as a result of voltage stress. In humid air, negative and positive shifts in the C-V curve are observed after negative and positive bias stress. In dry air no such shifts in the C-V curve are seen. These shifts are similar to those reported on oxide-based switches by Molinero and Castañer [Appl. Phys. Lett. 92, 043502 (2008)] where they show shifts occurring in room ambient pressure, but not in vacuum. This indicates that not only air pressure but also air humidity can be responsible for shifts in MEMS. ©2009 American Institute of Physics
History: Received 25 April 2009; accepted 7 October 2009; published 29 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/176101/1
FULL TEXT OPTIONS   (FREE)
Download HTML Download Sectioned HTML Download PDF (277 kB) View Cart

EDITORIALLY RELATED

  1. Comparison of air gap breakdown and substrate injection as mechanisms to induce dielectric charging in microelectromechanical switches
    D. Molinero et al.
    Appl. Phys. Lett. 92, 043502 (2008)

KEYWORDS and PACS

Keywords
PACS
  • 85.85.+j
    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
  • 77.22.Jp
    Dielectric breakdown and space-charge effects
  • 07.10.Cm
    Micromechanical devices and systems
  • 84.32.Dd
    Connectors, relays, and switches
  • YEAR: 2009

RELATED DATABASES

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (11)

  1. D. Molinero and L. Castaner, Appl. Phys. Lett. 92, 043502 (2008).
  2. A. Berman, Vacuum 47, 327 (1996). [Inspec] [ISI]
  3. S. T. Patton, K. C. Eapen, and J. S. Zabinski, Tribol. Int. 34, 481 (2001).
  4. R. A. B. Devine, D. Ball, J. D. Rowe, and J. W. Tringe, J. Electrochem. Soc. 150, F151 (2003). [ISI]
  5. Z. Chen, K. Hess, J. Lee, J. W. Lyding, E. Rosenbaum, I. Kizilyalli, S. Chetlur, and R. Huang, IEEE Electron Device Lett. 21, 24 (2000). [Inspec] [ISI]
  6. D. Molinero, R. Comulada, and L. Castaner, Appl. Phys. Lett. 89, 103506 (2006).
  7. R. W. Herfst, P. G. Steeneken, and J. Schmitz, Proceedings of the IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008 (unpublished), Vol. 13–17, p. 168.
  8. X. Rottenberg, I. De Wolf, B. K. Nauwelaers, W. De Raedt, and H. A. C. Tilmans, J. Microm. Syst. 16, 1243 2007. [Inspec]
  9. Z. Olszewski, R. Duane, and C. O'Mahony, Appl. Phys. Lett. 93, 094101 (2008).
  10. E. Hedborg, F. Winquist, H. Sundgren, and I. Lundstrom, Thin Solid Films 340, 250 (1999). [Inspec]
  11. M. Saadaoui, W. Wien, H. van Zeijl, A. van Bogaard, and P. M. Sarro, 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, Veldhoven, The Netherlands, 29–30 November, 2007 (unpublished).