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Purified Si film formation from metallurgical-grade Si by hydrogen plasma induced chemical transport

Appl. Phys. Lett. 95, 181506 (2009); doi:10.1063/1.3261751

Published 6 November 2009

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Hiromasa Ohmi, Akihiro Goto, Daiki Kamada, Yoshinori Hamaoka, Hiroaki Kakiuchi, and Kiyoshi Yasutake
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Purified Si film is prepared directly from metallurgical-grade Si (MG-Si) by using hydrogen plasma induced chemical transport at subatmospheric pressure. The purification mechanism is based on the different hydrogenation behaviors of the various impurity elements in MG-Si. The prepared Si films clearly had fewer typical metal impurities (Fe, Al, Ti, Cr, Mn, etc.) than those in the MG-Si. In particular, the Fe concentration was drastically reduced from 6900 mass ppm to less than 0.1 mass ppm by one time chemical transport. Furthermore, metal impurity concentrations were further reduced by repeating chemical transport deposition. ©2009 American Institute of Physics
History: Received 7 July 2009; accepted 20 October 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/181506/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 68.55.Ln
    Thin film defects and impurities
  • 52.77.Dq
    Plasma-based ion implantation and deposition
  • 81.15.Jj
    Ion and electron beam-assisted deposition; ion plating
  • 81.05.Cy
    Elemental semiconductors: fabrication, treatment, testing and analysis
  • YEAR: 2010

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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