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Kinetics of a transient silicide during the reaction of Ni thin film with (100)Si

Appl. Phys. Lett. 95, 181902 (2009); doi:10.1063/1.3257732

Published 2 November 2009

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Dominique Mangelinck, Khalid Hoummada, and Ivan Blum
Aix-Marseille Université, IM2NP, F-13397 Marseille Cedex, France and CNRS, IM2NP (UMR 6242) Faculté de Saint-Jérôme, Case 142, F-13397 Marseille Cedex, France
In situ measurements of the kinetics of the transient theta-Ni2Si phase formation have been obtained by x-ray diffraction and differential scanning calorimetry. A possible mechanism for the transient phase is proposed. It allows to simulate the growth and the consumption of the theta-Ni2Si during the growth of the delta-Ni2Si silicide. ©2009 American Institute of Physics
History: Received 16 September 2009; accepted 12 October 2009; published 2 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/181902/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.at
    Thin film nucleation and growth in other materials
  • 68.55.-a
    Thin film structure and morphology
  • 82.20.-w
    Chemical kinetics and dynamics
  • 81.15.Cd
    Deposition by sputtering
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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