Kinetics of a transient silicide during the reaction of Ni thin film with (100)Si
Appl. Phys. Lett. 95, 181902 (2009); doi:10.1063/1.3257732
Published 2 November 2009
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In situ measurements of the kinetics of the transient
-Ni2Si phase formation have been obtained by x-ray diffraction and differential scanning calorimetry. A possible mechanism for the transient phase is proposed. It allows to simulate the growth and the consumption of the
-Ni2Si during the growth of the
-Ni2Si silicide.
©2009 American Institute of Physics
-Ni2Si phase formation have been obtained by x-ray diffraction and differential scanning calorimetry. A possible mechanism for the transient phase is proposed. It allows to simulate the growth and the consumption of the
-Ni2Si during the growth of the
-Ni2Si silicide.
©2009 American Institute of Physics
| History: | Received 16 September 2009; accepted 12 October 2009; published 2 November 2009 |
| Permalink: |
http://link.aip.org/link/?APPLAB/95/181902/1 |
KEYWORDS and PACS
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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