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Carrier relaxation dynamics of ZnxCd1−xSe/C core/shell nanocrystals with phase separation as studied by time-resolved cathodoluminescence

Appl. Phys. Lett. 95, 181903 (2009); doi:10.1063/1.3257975

Published 2 November 2009

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Y. Estrin,1 D. H. Rich,1 O. Moshe,1 Sayan Bhattacharyya,2 and A. Gedanken2
1Department of Physics, The Ilse Katz Institute for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel
2Department of Chemistry, Kanbar Laboratory for Nanomaterials at the Bar-Ilan University Center for Advanced Materials and Nanotechnology, Bar-Ilan University, Ramat-Gan 52900, Israel
The optical properties and carrier relaxation kinetics of ZnxCd1−xSe/C core/shell nanocrystals with compositional phase separation occurring on a ~1–5  nm size scale were examined with time-resolved cathodoluminescence (CL) spectroscopy and imaging. The CL spectral lineshape was found to depend on the level of excitation, temperature, and the time-window during time-delayed spectroscopy. The kinetics of carrier thermalization and transfer between Cd-rich phase-separated regions and the homogenous ZnCdSe alloy were examined. We show that the rare phenomenon of compositional phase separation in II-VI nanocrystals leads to interesting and potentially useful optical properties. ©2009 American Institute of Physics
History: Received 3 September 2009; accepted 11 October 2009; published 2 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/181903/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.67.Bf
    Optical properties of nanocrystals and nanoparticles
  • 61.46.Df
    Structure of nanocrystals and nanoparticles
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • 64.75.Qr
    Phase separation and segregation in semiconductors
  • 73.63.Bd
    Nanocrystalline materials (electronic transport)
  • 81.05.Dz
    II-VI semiconductors: fabrication, treatment, testing and analysis
  • 78.60.Hk
    Cathodoluminescence, ionoluminescence (condensed matter)
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (16)
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  1. X. T. Zhang, Z. Liu, Q. Li, and S. K. Hark, J. Phys. Chem. B 109, 17913 (2005).
  2. R. Venugopal, P. I. Lin, and Y. -T. Chen, J. Phys. Chem. B 110, 11691 (2006).
  3. H. Lee, P. H. Holloway, H. Yang, L. Hardison, and D. Kleiman, J. Chem. Phys. 125, 164711 (2006).
  4. Y. -M. Sung, Y. -J. Lee, and K. -S. Park, J. Am. Chem. Soc. 128, 9002 (2006).
  5. K. C. Hsieh, J. N. Baillargeon, and K. Y. Cheng, Appl. Phys. Lett. 57, 2244 (1990).
  6. A. Mascarenhas, R. G. Alonso, G. S. Horner, S. Froyen, K. C. Hsieh, and K. Y. Cheng, Phys. Rev. B 48, 4907 (1993).
  7. Y. Tang, D. H. Rich, A. M. Moy, and K. Y. Cheng, J. Vac. Sci. Technol. B 15, 1034 (1997).
  8. A. Marbeuf, R. Druilhe, R. Triboulet, and G. Patriarche, J. Cryst. Growth 117, 10 (1992).
  9. H. S. Lee, H. S. Sohn, J. Y. Lee, K. H. Lee, Y. H. Kim, T. W. Kim, M. S. Kown, and H. L. Park, J. Appl. Phys. 99, 093512 (2006).
  10. S. Bhattacharyya, Y. Estrin, O. Moshe, D. H. Rich, L. A. Solovyov, and A. Gedanken, ACS Nano 3, 1864 (2009).
  11. H. T. Lin, D. H. Rich, A. Konkar, P. Chen, and A. Madhukar, J. Appl. Phys. 81, 3186 (1997).
  12. G. W. Bryant, Phys. Rev. B 37, 8763 (1988).
  13. W. Yang, R. R. Lowe-Webb, H. Lee, and P. C. Sercel, Phys. Rev. B 56, 13314 (1997).
  14. K. Kanaya and S. Okayama, J. Phys. D: Appl. Phys. 5, 43 (1972).
  15. We have estimated the generation rate, G, of carriers in a spherical Zn0.47Cd0.53Se nanocrystal with a volume of 2.2×104  nm3 under a 15 keV e-beam excitation condition using the standard model which uses a material-dependent normalized one-dimensional depth dose curve, as described in Ref. 14. From this estimation G[approximate]4.3×1011  s−1 for a 1 nA e-beam current and tau[approximate]0.6  ns from the time-resolved CL measurements.
  16. The Fermi energy for a 2D system is given by EF=kBT ln[exp(pi[h-bar]2n/mekBT)−1], where me[approximate]0.12  m0 for Zn0.47Cd0.53Se, from O. Madelung, Semiconductors—Basic Data, 2nd ed. (Springer, New York, 1996).

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