Applied Physics Letters
Search:
   
 
 
 
Previous Article
Pressure enhancement of the isostructural cubic decomposition in Ti1−xAlxN
The influence of pressure on the phase stabilities of Ti1−xAlxN solid solutions has been studied using first principles calculations. We find that the application of hydrostatic pressure enhance...
Next Article
Thermal properties of char obtained by pyrolysis: A molecular dynamics simulation study
The thermal conductivity of pyrolytic char obtained by ultrahigh temperature decomposition of polyethylene specimen via molecular dynamics simulations is investigated as a function of temperature and ...

Enhanced thermal stability of Pt electrodes for flat epitaxial biferroic-YMnO3/Pt heterostructures

Appl. Phys. Lett. 95, 181907 (2009); doi:10.1063/1.3259417

Published 5 November 2009

You are not logged in to this journal. Log in

R. Bachelet,1 R. Muralidharan,1 F. Rigato,1 N. Dix,1 X. Martí,1 J. Santiso,2 F. Sánchez,1 and J. Fontcuberta1
1Institut de Ciència de Materials de Barcelona—CSIC, Campus UAB, 08193 Bellaterra, Spain
2Centro de Investigación en Nanociencia y Nanotecnología, CIN2 (CSIC-ICN), Bellaterra 08193, Spain

We have investigated the thermal stability of platinum electrodes on oxide substrates for oxide-based devices. We show that flat epitaxial Pt(111) bottom electrodes, deposited on SrTiO3(111) and Al2O3(0001) substrates, can be stable against dewetting up to usual oxide-deposition temperatures (Ts) by increasing Pt film thickness (tPt) and preferably using SrTiO3(111) rather than Al2O3(0001) substrates. Subsequently, high-quality epitaxial biferroic YMnO3/Pt/oxide-substrate heterostructures have been grown. A diagram of morphological and crystalline quality versus tPt and Ts is given for both YMnO3/Pt/SrTiO3(111) and YMnO3/Pt/Al2O3(0001) heterostructures. These results shall guideline the growth of other functional oxide thin films on Pt electrodes. ©2009 American Institute of Physics
History: Received 29 May 2009; accepted 14 October 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/181907/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (466 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 68.60.Dv
    Thermal stability of thin films; thermal effects
  • 81.15.-z
    Methods of deposition of films and coatings
  • 77.80.-e
    Ferroelectricity and antiferroelectricity
  • 77.84.Bw
    Dielectric, piezoelectric, and ferroelectric elements, oxides, nitrides, borides, carbides, chalcogenides, etc
  • 68.55.-a
    Thin film structure and morphology
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (18)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. V. Laukhin, V. Skumryev, X. Martí, D. Hrabovsky, F. Sánchez, M. V. García-Cuenca, C. Ferrater, M. Varela, U. Lüders, J. F. Bobo, and J. Fontcuberta, Phys. Rev. Lett. 97, 227201 (2006).
  2. X. Martí, F. Sánchez, J. Fontcuberta, M. V. García-Cuenca, C. Ferrater, and M. Varela, J. Appl. Phys. 99, 08P302 (2006).
  3. C. Noguera, J. Phys.: Condens. Matter 12, R367 (2000).
  4. S. Ezhilvalavan and T. -Y. Tseng, Mater. Chem. Phys. 65, 227 (2000).
  5. H. -P. Steinrück, F. Pesty, L. Zhang, and T. E. Madey, Phys. Rev. B 51, 2427 (1995).
  6. T. J. Minvielle, R. L. White, M. L. Hildner, and R. J. Wilson, Surf. Sci. 366, L755 (1996).
  7. A. Nefedov, A. Abromeit, Ch. Morawe, and A. Stierle, J. Phys.: Condens. Matter 10, 717 (1998).
  8. X. Martí, F. Sánchez, D. Hrabovsky, J. Fontcuberta, V. Laukhin, V. Skumryev, M. V. García-Cuenca, C. Ferrater, M. Varela, U. Lüders, J. F. Bobo, S. Estradé, J. Arbiol, and F. Peiró, J. Cryst. Growth 299, 288 (2007).
  9. J. R. Duclère, M. Guilloux-Viry, V. Bouquet, A. Perrin, E. Cattan, C. Soyer, and D. Rèmiens, Appl. Phys. Lett. 83, 5500 (2003).
  10. S. P. Keane, S. Schmidt, J. Lu, A. E. Romanov, and S. Stemmer, J. Appl. Phys. 99, 033521 (2006).
  11. H. Zhou, P. Wochner, A. Schöps, and T. Wagner, J. Cryst. Growth 234, 561 (2002).
  12. D. J. Srolovitz and M. G. Goldiner JOM 47, 31 (1995).
  13. R. Nuryadi, Y. Ishikawa, Y. Ono, and M. Tabe, J. Vac. Sci. Technol. B 20, 167 (2002).
  14. F. Silly and M. R. Castell, Phys. Rev. Lett. 94, 046103 (2005).
  15. M. H. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. A. Park, Y. K. Kim, K. Jeong, S. K. Kang, and D. H. Ko, Appl. Phys. Lett. 83, 4758 (2003).
  16. S. H. Kim, D. J. Kim, J. P. Maria, A. I. Kingon, S. K. Striffer, J. Im, O. Auciello, and A. R. Krauss, Appl. Phys. Lett. 76, 496 (2000).
  17. J. -W. Kim, K. Dörr, K. Nenkov, and L. Schultz, J. Appl. Phys. 101, 09M108 (2007).
  18. S. M. Foiles, M. I. Baskes, and M. S. Daw, Phys. Rev. B 33, 7983 (1986).

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.