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Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100)

Appl. Phys. Lett. 95, 181909 (2009); doi:10.1063/1.3242002

Published 5 November 2009

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Junqi Xie,1 J. Tolle,1 V. R. D'Costa,2 A. V. G. Chizmeshya,1 J. Menéndez,2 and J. Kouvetakis1
1Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, USA
2Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504, USA
Doped and intrinsic Ge1−x−ySixSny alloys are synthesized directly on Si(100) using simple deposition chemistries and their optical and electrical properties are determined. Tuning the Si/Sn ratio at ~4 yields strain-free films with Ge-like cell dimensions, while variation of the ratio around this value produces compressively strained, tetragonal structures with an in-plane lattice constant “pinned” to a value close to that of pure Ge (5.658 Å). First-principles calculations show that mixing entropy thermodynamically stabilizes SiGeSn in contrast to GeSn analogs with the same Sn content. GeSn and SiGeSn are predicted to become metastable for 2% and 12% Sn, respectively, in good agreement with experiment. ©2009 American Institute of Physics
History: Received 1 September 2009; accepted 11 September 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/181909/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.61.Cw
    Electrical properties of elemental semiconductors (thin films)
  • 78.66.Db
    Optical properties of elemental semiconductors and insulators (thin films)
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (8)
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