Quantum confined Stark effect and corresponding lifetime reduction in a single InxGa1−xN quantum disk
Appl. Phys. Lett. 95, 181910 (2009); doi:10.1063/1.3257698
Published 5 November 2009
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Time-integrated and time-resolved microphotoluminescence studies were carried out on InxGa1−xN quantum disks embedded in GaN nanocolumns grown by molecular beam epitaxy. Emission at ~3.33 eV from confined states was detected and observed to blueshift with excitation power; a result of charge screening and the quantum confined Stark effect. Due to the reduced band bending and resulting increased overlap of the confined electron and hole wave functions, the lifetime of the emission was measured to decrease with increasing excitation power. The saturation of the blueshift and lifetime reduction follows that of the peak intensity, indicating a Stark screening process.
©2009 American Institute of Physics
| History: | Received 28 September 2009; accepted 12 October 2009; published 5 November 2009 |
| Permalink: |
http://link.aip.org/link/?APPLAB/95/181910/1 |
KEYWORDS and PACS
gallium compounds,
III-V semiconductors,
indium compounds,
molecular beam epitaxial growth,
nanofabrication,
nanostructured materials,
photoluminescence,
quantum confined Stark effect,
semiconductor quantum wells,
spectral line shift,
time resolved spectra,
wave functions,
wide band gap semiconductors
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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