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Mechanics of hemispherical electronics

Appl. Phys. Lett. 95, 181912 (2009); doi:10.1063/1.3256185

Published 5 November 2009

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Shuodao Wang,1 Jianliang Xiao,1 Inhwa Jung,2 Jizhou Song,3 Heung Cho Ko,4 Mark P. Stoykovich,5 Yonggang Huang,1,6 Keh-Chih Hwang,7 and John A. Rogers2,8
1Department of Mechanical Engineering, Northwestern University, Evanston, Illinois 60208, USA
2Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801, USA
3Department of Mechanical and Aerospace Engineering, University of Miami, Coral Gables, Florida 33146, USA
4Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Republic of Korea
5Department of Chemical and Biological Engineering, University of Colorado-Boulder, Boulder, Colorado 80309, USA
6Department of Civil and Environmental Engineering, Northwestern University, Evanston, Illinois 60208, USA
7Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
8Department of Chemistry and Department of Mechanical Science and Engineering, University of Illinois, Urbana, Illinois 61801, USA
A simple analytical model is established for the development of hemisphere electronics, which has many important applications in electronic-eye cameras and related curvilinear systems. The photodetector arrays, made in planar mesh layouts with conventional techniques, are deformed and transferred onto a hemisphere. The model gives accurately the positions of photodetectors on the hemisphere, and has been validated by experiments and finite element analysis. The results also indicate very small residual strains in the photodetectors. The model provides a tool to define a pattern of photodetectors in the planar, as-fabricated layout to yield any desired spatial configuration on the hemisphere. ©2009 American Institute of Physics
History: Received 27 August 2009; accepted 1 October 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/181912/1
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EPAPS

KEYWORDS and PACS

Keywords
PACS
  • 85.60.Gz
    Photodetectors
  • 85.60.Bt
    Optoelectronic device characterization, design, and modeling
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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