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Optical properties of 1.3  µm InAs/GaAs bilayer quantum dots with high areal density

Appl. Phys. Lett. 95, 181913 (2009); doi:10.1063/1.3262960

Published 6 November 2009

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C. Y. Ngo,1 S. F. Yoon,1 D. R. Lim,1 Vincent Wong,2 and S. J. Chua3
1School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
2Temasek Laboratories @ NTU, Nanyang Technological University, 50 Nanyang Drive, Singapore 639798, Singapore
3Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore
InAs/GaAs bilayer quantum dots (BQDs) are interesting structures for long wavelength emission due to its ability to tune the areal density and dot size separately. However, the need for two sets of growth rate and temperature for the respective QD layers complicates the growth procedures. Furthermore, the highest areal density reported for BQDs with 1.3  µm emission is only in the low 1010  cm−2. In this letter, we investigated the effect of GaAs spacer thickness and monolayer coverage of the active QDs on the optical properties of InAs/GaAs BQDs grown with constant growth rate and temperature. Consequently, high areal density (~1.2×1011  cm−2) and room temperature photoluminescence emission at 1304 nm with spectral width of 24 meV was obtained. ©2009 American Institute of Physics
History: Received 6 August 2009; accepted 20 October 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/181913/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.67.Hc
    Optical properties of quantum dots
  • 78.55.Cr
    Photoluminescence in III-V semiconductors
  • YEAR: 2010

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (16)
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