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Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy

Appl. Phys. Lett. 95, 181914 (2009); doi:10.1063/1.3262964

Published 6 November 2009

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A. Pinos,1 S. Marcinkevičius,1 J. Yang,2 Y. Bilenko,2 M. Shatalov,2 R. Gaska,2 and M. S. Shur3
1School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden
2Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, South Carolina 29209, USA
3Department of Electrical, Computer, and Systems Engineering, Center of Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Emission from a 285 nm AlGaN quantum well light emitting diode has been studied by scanning near-field optical spectroscopy. The scans revealed micrometer-size domainlike areas emitting with a higher intensity and at a longer wavelength; presumably, because of a lower AlN molar fraction in these regions. Experiments performed on different days have shown that with time, intensity from these spots increases and emission wavelength shifts to the red, indicating a further change in the quantum well alloy composition. This has allowed distinguishing an aging mechanism that involves locally increased current, heating, and atom migration. ©2009 American Institute of Physics
History: Received 23 July 2009; accepted 21 October 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/181914/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Jb
    Light-emitting devices
  • 81.05.Ea
    III-V semiconductors: fabrication, treatment, testing and analysis
  • 81.40.Cd
    Solid solution hardening, precipitation hardening, and dispersion hardening; aging
  • YEAR: 2010

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (21)
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