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Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Appl. Phys. Lett. 95, 182101 (2009); doi:10.1063/1.3254330

Published 2 November 2009

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S. F. Feste,1 Th. Schäpers,1 D. Buca,1 Q. T. Zhao,1 J. Knoch,2 M. Bouhassoune,3 Arno Schindlmayr,3 and S. Mantl1
1Institute of Bio- and Nanosystems (IBN1) and JARA-FIT Fundamentals of Future Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany
2Micro- and Nanoelectronics Devices Group, TU Dortmund University, 44227 Dortmund, Germany
3Department Physik, Universität Paderborn, 33095 Paderborn, Germany
We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4  K for magnetic fields of B=0–10  T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the effective electron mass in the presence of strain. ©2009 American Institute of Physics
History: Received 16 July 2009; accepted 6 October 2009; published 2 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/182101/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Qv
    Electrical properties of metal-insulator-semiconductor structures
  • 71.18.+y
    Fermi surface: calculations and measurements; effective mass, -g factor
  • 85.30.Tv
    Semiconductor field effect devices
  • 72.20.My
    Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)
  • 71.15.Mb
    Density functional theory, local density approximation, gradient and other corrections (condensed matter electronic structure)
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (16)
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For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. Y. Sun, S. E. Thompson, and T. Nishida, J. Appl. Phys. 101, 104503 (2007).
  2. D. Buca, B. Holländer, H. Trinkaus, S. Mantl, R. Carius, R. Loo, M. Caymax, and H. Schaefer, Appl. Phys. Lett. 85, 2499 (2004).
  3. S. Takagi, T. Mizuno, T. Tezuka, N. Sugiyama, S. Nakaharai, T. Numata, J. Koga, and K. Uchida, Solid-State Electron. 49, 684 (2005).
  4. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
  5. A. Saxler, P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, and J. S. Speck, J. Appl. Phys. 87, 369 (2000).
  6. W. Pan, D. C. Tsui, and B. L. Draper, Phys. Rev. B 59, 10208 (1999).
  7. F. F. Fang, A. B. Fowler, and A. Hartstein, Phys. Rev. B 16, 4446 (1977).
  8. M. Dragosavac, D. J. Paul, M. Pepper, A. B. Fowler, and D. A. Buchanan, Semicond. Sci. Technol. 20, 664 (2005).
  9. J. L. Smith and P. J. Stiles, Phys. Rev. Lett. 29, 102 (1972).
  10. A. B. Fowler, F. F. Fang, W. E. Howard, and P. J. Stiles, Phys. Rev. Lett. 16, 901 (1966).
  11. P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964).
  12. W. Kohn and L. J. Sham, Phys. Rev. 140, A1133 (1965).
  13. L. Hedin, Phys. Rev. 139, A796 (1965).
  14. M. M. Rieger, L. Steinbeck, I. D. White, H. N. Rojas, and R. W. Godby, Comput. Phys. Commun. 117, 211 (1999)
    15. C. Freysoldt, P. Eggert, P. Rinke, A. Schindlmayr, R. W. Godby, and M. Scheffler, ibid. 176, 1 (2007).
  15. D. Yu, Y. Zhang, and F. Liu, Phys. Rev. B 78, 245204 (2008).
  16. M. Oshikiri, F. Aryasetiawan, Y. Imanaka, and G. Kido, Phys. Rev. B 66, 125204 (2002).

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