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Negative differential resistance in conductive polymer and semiconducting quantum dot nanocomposite systems

Appl. Phys. Lett. 95, 182102 (2009); doi:10.1063/1.3258350

Published 2 November 2009

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S. Biswas,1 M. Dutta,1,2 and M. A. Stroscio1,2,3
1Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, USA
2Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, USA
3Department of Bioengineering, University of Illinois at Chicago, Chicago, Illinois 60607, USA
We report the room temperature negative differential resistance (NDR) phenomenon in nanocomposite heterostructures made of semiconducting quantum dots embedded in conductive polymers. The peak to valley ratio of the current is 91 at room temperature which increases to 2965 at 77 K. The current voltage characteristics are simulated for a double barrier resonant tunneling device formed by semiconducting quantum dots and polymer molecules. The temperature dependence is also simulated and compared with the experimental results. A close agreement is found for the experimental and the simulation results for the location of the NDR peaks. ©2009 American Institute of Physics
History: Received 10 August 2009; accepted 6 October 2009; published 2 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/182102/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.63.Kv
    Quantum dots (electronic transport)
  • 73.40.Gk
    Tunneling (electronic transport)
  • 73.23.-b
    Electronic transport in mesoscopic systems
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (10)
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