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Design of graphene electronic devices using nanoribbons of different widths

Appl. Phys. Lett. 95, 182104 (2009); doi:10.1063/1.3257731

Published 5 November 2009

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G. G. Naumis,1 M. Terrones,2 H. Terrones,2 and L. M. Gaggero-Sager3
1Departamento de Física-Química, Instituto de Física, Universidad Nacional Autónoma de México (UNAM) Apartado Postal 20-364, 01000 México D.F., Mexico
2Laboratory for Nanoscience and Nanotechnology Research (LINAN) and Advanced Materials Department, IPICYT, Camino a la Presa San José 2055 Lomas 4a. Sección, San Luis Potosí 78216, Mexico
3Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 10001, Cuernavaca, 62210 Morelos, Mexico
We present a simple design of a field effect transistor based on graphene nanoribbons, taking advantage of the metallic and semiconductor nature of nanoribbons with different widths. Such device could be constructed by using lithography techniques. The conductance of the proposed device is obtained by using the Kubo formula, assuming a strong damping due to the substrate and imperfections of the lattice. By removing the control electrodes, the design could also be used as an electrical resistance. ©2009 American Institute of Physics
History: Received 25 August 2009; accepted 12 October 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/182104/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 81.16.Nd
    Nanolithography in nanofabrication and processing
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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