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Observation of the zero-magnetic-field exciton spin splitting in high quality bulk GaAs and AlGaAs

Appl. Phys. Lett. 95, 182107 (2009); doi:10.1063/1.3257369

Published 6 November 2009

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E. V. Kozhemyakina,1,2 K. S. Zhuravlev,1 A. Amo,2,3 D. Ballarini,2 and L. Viña2
1Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
2Departamento de Física de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
3Laboratoire Kastler Brossel, Université Paris 6, CNRS—UPMC, F-75252 Paris, France
We present an experimental study of the zero-magnetic-field exciton spin splitting measured by time-resolved photoluminescence in high purity bulk GaAs and AlGaAs samples. The dynamics of the splitting differs from that observed in two dimensions. Initially, the splitting increases during 100–250 ps and then decays. This initial increase is attributed to the fast rise of the density of excitons formed from noncorrelated e-h pairs. The splitting dynamics is used to determine the exciton formation time, which is found to vary with excitation density from 70 to 360 ps. ©2009 American Institute of Physics
History: Received 27 July 2009; accepted 9 October 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/182107/1
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KEYWORDS and PACS

Keywords
PACS
  • 71.35.-y
    Excitons and related phenomena
  • 78.55.Cr
    Photoluminescence in III-V semiconductors
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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