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Field dependence of barrier heights and luminescence properties in polar and nonpolar InGaN/GaN single quantum wells

Appl. Phys. Lett. 95, 182109 (2009); doi:10.1063/1.3258649

Published 6 November 2009

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Hooyoung Song,1,2 Jin Soak Kim,1 Eun Kyu Kim,1 Sung-Ho Lee,2 and Sung-Min Hwang2
1Department of Physics and Quantum-Function Spinics Laboratory, Hanyang University, Seoul 133-791, Republic of Korea
2Green Energy Research Center, Korea Electronics Technology Institute, Gyeonggido 463-816, Republic of Korea
The external field dependence of barrier heights and the internal field dependence of luminescence properties in InxGa1−xN/GaN single quantum wells (SQWs) with polar (x=0.13) and nonpolar (x=0.15) orientations were investigated. The conduction band offset of a SQW was characterized by using deep level transient spectroscopy. At a reverse bias of −3 V, the barrier height of the nonpolar SQW was estimated to be 0.42 eV, which is smaller than the 0.60 eV seen in the polar SQW due to the absence of internal fields along the nonpolar direction. Both samples showed a redshift of barrier heights with increasing reverse bias. The carrier recombination affected by carrier localization, quantum-confined Stark effect, and Varshni's shift was analyzed through temperature-dependent photoluminescence. Numerical simulations of the barrier heights and internal fields showed good agreement with experimental results. ©2009 American Institute of Physics
History: Received 15 June 2009; accepted 15 October 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/182109/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.67.De
    Optical properties of quantum wells
  • 71.55.Eq
    Impurity and defect levels in III-V semiconductors
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • 78.55.Cr
    Photoluminescence in III-V semiconductors
  • 73.21.Fg
    Quantum wells (electron states/collective excitations)
  • 73.63.Hs
    Quantum wells (electronic transport)
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (20)
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