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The magnetoelectric coupling existing in some multiferroics may allow the low-power electrical control of spintronics devices. However, room temperature magnetoelectric multiferroics are extremely rar...

Giant tunneling magnetoresistance up to 330% at room temperature in sputter deposited Co2FeAl/MgO/CoFe magnetic tunnel junctions

Appl. Phys. Lett. 95, 182502 (2009); doi:10.1063/1.3258069

Published 3 November 2009

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Wenhong Wang, Hiroaki Sukegawa, Rong Shan, Seiji Mitani, and Koichiro Inomata
Magnetic Materials Center, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
Magnetoresistance ratio up to 330% at room temperature (700% at 10 K) has been obtained in a spin-valve-type magnetic tunnel junction (MTJ) consisting of a full-Heusler alloy Co2FeAl electrode and a MgO tunnel barrier fabricated on a single crystal MgO (001) substrate by sputtering method. The output voltage of the MTJ at one-half of the zero-bias value was found to be as high as 425 mV, which is the largest reported to date in MTJs using Heusler alloy electrodes. The present finding suggests that Co2FeAl may be one of the most promising candidates for future spintronics devices applications. ©2009 American Institute of Physics
History: Received 14 June 2009; accepted 12 October 2009; published 3 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/182502/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.47.De
    Giant magnetoresistance
  • 73.50.Jt
    Galvanomagnetic and other magnetotransport effects in thin films
  • 81.15.Cd
    Deposition by sputtering
  • 75.70.Cn
    Magnetic properties of interfaces
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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