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Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature

Appl. Phys. Lett. 95, 182505 (2009); doi:10.1063/1.3259821

Published 5 November 2009

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L. Chen, S. Yan, P. F. Xu, J. Lu, W. Z. Wang, J. J. Deng, X. Qian, Y. Ji, and J. H. Zhao
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China
We report the low-temperature magnetotransport behaviors of (Ga,Mn)As films with the nominal Mn concentration x larger than 10%. The ferromagnetic transition temperature TC can be enhanced to 191 K after postgrowth annealing (Ga,Mn)As with x=20%. The temperature Tm, corresponding to the resistivity minimum in the curve of resistivity versus temperature at temperature below TC, depends on Mn concentration, annealing condition, and magnetic field. Moreover, we find that the variable-range hopping may be the main conductive mechanism when temperature is lower than Tm. ©2009 American Institute of Physics
History: Received 10 August 2009; accepted 14 October 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/182505/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.20.My
    Galvanomagnetic and other magnetotransport effects (semiconductors/insulators)
  • 75.50.Dd
    Nonmetallic ferromagnetic materials
  • 73.61.Ey
    Electrical properties of III-V semiconductors (thin films)
  • 75.50.Pp
    Magnetic semiconductors
  • 61.72.U-
    Doping and impurity implantation in crystals
  • 75.30.Kz
    Magnetic phase boundaries
  • YEAR: 2010

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (20)
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