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Spin-dependent intergranular transport in highly spin-polarized Co1−xFexS2 thin films

Appl. Phys. Lett. 95, 182510 (2009); doi:10.1063/1.3262958

Published 6 November 2009

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M. Manno,1 R. Frakie,1 B. Bolon,2 and C. Leighton1
1Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA
2Department of Physics, Hamline University, Saint Paul, Minnesota 55104, USA

Magnetic and magnetotransport measurements on polycrystalline thin film Co1−xFexS2, a system that exhibits tunable conduction electron spin polarization in bulk, are reported. The films exhibit a low field hysteretic magnetoresistance (MR) due to spin-dependent intergranular tunneling, thus providing a simple probe of the spin polarization. The MR increases rapidly with x, saturating as the magnetization reaches 1.0µB/Co, demonstrating that high, doping tunable, spin polarization can be readily achieved in thin films synthesized by simple methods. Quantitative estimates yield spin polarizations as high as 90%. ©2009 American Institute of Physics
History: Received 10 July 2009; accepted 16 October 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/182510/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.25.Dc
    Spin polarized transport in semiconductors
  • 75.50.Pp
    Magnetic semiconductors
  • 73.50.Jt
    Galvanomagnetic and other magnetotransport effects in thin films
  • 75.70.Ak
    Magnetic properties of monolayers and thin films
  • 75.60.Ej
    Magnetization curves, hysteresis, Barkhausen and related effects
  • 73.61.Le
    Electrical properties of other inorganic semiconductors (thin films)
  • YEAR: 2010

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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