Spin-dependent intergranular transport in highly spin-polarized Co1−xFexS2 thin films
Appl. Phys. Lett. 95, 182510 (2009); doi:10.1063/1.3262958
Published 6 November 2009
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Magnetic and magnetotransport measurements on polycrystalline thin film Co1−xFexS2, a system that exhibits tunable conduction electron spin polarization in bulk, are reported. The films exhibit a low field hysteretic magnetoresistance (MR) due to spin-dependent intergranular tunneling, thus providing a simple probe of the spin polarization. The MR increases rapidly with x, saturating as the magnetization reaches 1.0µB/Co, demonstrating that high, doping tunable, spin polarization can be readily achieved in thin films synthesized by simple methods. Quantitative estimates yield spin polarizations as high as 90%.
©2009 American Institute of Physics
| History: | Received 10 July 2009; accepted 16 October 2009; published 6 November 2009 |
| Permalink: |
http://link.aip.org/link/?APPLAB/95/182510/1 |
KEYWORDS and PACS
cobalt compounds,
iron compounds,
magnetic semiconductors,
magnetic thin films,
magnetic tunnelling,
magnetisation,
magnetoresistance,
semiconductor thin films,
spin polarised transport
- 72.25.Dc
Spin polarized transport in semiconductors - 75.50.Pp
Magnetic semiconductors - 73.50.Jt
Galvanomagnetic and other magnetotransport effects in thin films - 75.70.Ak
Magnetic properties of monolayers and thin films - 75.60.Ej
Magnetization curves, hysteresis, Barkhausen and related effects - 73.61.Le
Electrical properties of other inorganic semiconductors (thin films) - YEAR: 2010
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
REFERENCES (30)
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