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Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing

Appl. Phys. Lett. 95, 183102 (2009); doi:10.1063/1.3258648

Published 3 November 2009

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J. J. Zhang,1 A. Rastelli,2 H. Groiss,1 J. Tersoff,3 F. Schäffler,1 O. G. Schmidt,2 and G. Bauer1
1Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz, Austria
2Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany
3IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
We investigate the effect of in situ annealing on the shape, size, and chemical composition of ordered SiGe islands grown on pit-patterned Si(001) substrates. In contrast to planar substrates, intermixing with substrate material occurs symmetrically during annealing because the substrate patterning pins the island position and suppresses lateral motion. The results are consistent with surface-mediated intermixing and demonstrate that annealing is an effective method to tune the island properties with no appreciable deterioration of the ensemble homogeneity. ©2009 American Institute of Physics
History: Received 27 August 2009; accepted 14 October 2009; published 3 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/183102/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.40.Ef
    Cold working, work hardening and annealing
  • 81.05.Hd
    Other semiconductors: fabrication, treatment, testing and analysis
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (24)
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