Applied Physics Letters
Search:
   
 
 
 
Previous Article
Bifurcation topology tuning of a mixed behavior in nonlinear micromechanical resonators
We report the experimental observation of a four-bifurcation-point (or five possible amplitudes for a given frequency) behavior of electrostatically actuated micromechanical resonators, called the mix...
Next Article
Coupling between even- and oddlike modes in a single asymmetric photonic crystal waveguide
The photonic crystal (PC) is an important structure for realizing optical integrative circuits. Nowadays, most PC based passive devices operate by utilizing the coupling either between several PC wave...

All graphene electromechanical switch fabricated by chemical vapor deposition

Appl. Phys. Lett. 95, 183105 (2009); doi:10.1063/1.3259415

Published 5 November 2009

You are not logged in to this journal. Log in

Kaveh M. Milaninia,1 Marc A. Baldo,2 Alfonso Reina,1 and Jing Kong2
1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
2Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

We demonstrate an electromechanical switch comprising two polycrystalline graphene films; each deposited using ambient pressure chemical vapor deposition. The top film is pulled into electrical contact with the bottom film by application of approximately 5 V between the layers. Contact is broken by mechanical restoring forces after bias is removed. The device switches several times before tearing. Demonstration of switching at low voltage confirms that graphene is an attractive material for electromechanical switches. Reliability may be improved by scaling the device area to within one crystalline domain of the graphene films. ©2009 American Institute of Physics
History: Received 17 September 2009; accepted 14 October 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/183105/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (350 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 84.32.Dd
    Connectors, relays, and switches
  • 85.35.-p
    Nanoelectronic devices
  • 07.10.Cm
    Micromechanical devices and systems
  • 85.85.+j
    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
  • 81.15.Gh
    Chemical vapor deposition
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (20)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. International Technology Roadmap for Semiconductors (ITRS), Design, Semiconductor Industry Association (SIA, San Jose, 2007).
  2. T. Rueckes, K. Kim, E. Joselevich, G. Y. Tseng, C. -L. Cheung, and C. M. Lieber, Science 289, 94 (2000).
  3. S. W. Lee, D. S. Lee, R. E. Morjan, S. H. Jhang, M. Sveningsson, O. A. Nerushev, Y. W. Park, and E. E. B. Campbell, Nano Lett. 4, 2027 (2004).
  4. J. E. Jang, S. N. Cha, Y. Choi, G. A. J. Amaratunga, D. J. Kang, D. G. Hasko, J. E. Jung, and J. M. Kim, Appl. Phys. Lett. 87, 163114 (2005).
  5. W. W. Jang, J. O. Lee, J. -B. Yoon, M. -S. Kim, J. -M. Lee, S. -M. Kim, K. -H. Cho, D. -W. Kim, D. Park, and W. -S. Lee, Appl. Phys. Lett. 92, 103110 (2008).
  6. B. Bhushan, Springer Handbook of Nanotechnology (Springer, Berlin, 2006).
  7. L. L. Mercado, S. -M. Kuo, T. -Y. T. Lee, and L. Liu, A Mechanical Approach to Overcome RF MEMS Switch Stiction Problem, Piscataway, NJ, USA, May 27-30, 2003 p. 377.
  8. J. S. Bunch, A. M. van der Zande, S. S. Verbridge, I. W. Frank, D. M. Tanenbaum, J. M. Parpia, H. G. Craighead, and P. L. McEuen, Science 315, 490 (2007).
  9. J. Cumings and A. Zettl, Science 289, 602 (2000).
  10. A. M. Fennimore, T. D. Yuzvinsky, W. -Q. Han, M. S. Fuhrer, J. Cumings, and A. Zettl, Nature (London) 424, 408 (2003).
  11. B. Bourlon, D. Christian Glattli, C. Miko, L. Forro, and A. Bachtold, Nano Lett. 4, 709 (2004).
  12. V. V. Deshpande, H. -Y. Chiu, H. W. C. Postma, C. Miko, L. Forro, and M. Bockrath, Nano Lett. 6, 1092 (2006).
  13. J. C. Meyer, A. K. Geim, M. I. Katsnelson, K. S. Novoselov, T. J. Booth, and S. Roth, Nature (London) 446, 60 (2007).
  14. K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. -H. Ahn, P. Kim, J. -Y. Choi, and B. H. Hong, Nature (London) 457, 706 (2009).
  15. A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M. S. Dresselhaus, and J. Kong, Nano Lett. 9, 30 (2009).
  16. A. Reina, S. Thiele, X. Jia, S. Bhaviripudi, M. Dresselhaus, J. Schaefer, and J. Kong, Nano Res. 2, 509 (2009).
  17. X. Lu, H. Huang, N. Nemohuk, and R. S. Ruoff, Appl. Phys. Lett. 75, 193 (1999).
  18. X. Du, I. Skachko, A. Barker, and E. Y. Andrei, Nat. Nanotechnol. 3, 491 (2008).
  19. C. Gomez-Navarro, M. Burghard, and K. Kern, Nano Lett. 8, 2045 (2008).
  20. S. W. Hsieh, C. Y. Chang, and S. C. Hsu, J. Appl. Phys. 74, 2638 (1993).

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.