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Thermalization of exciton states in silicon nanocrystals

Appl. Phys. Lett. 95, 183107 (2009); doi:10.1063/1.3251783

Published 5 November 2009

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Brian Julsgaard, Ying-Wei Lu, Peter Balling, and Arne Nylandsted Larsen
Department of Physics and Astronomy, University of Aarhus, Ny Munkegade 120, DK-8000 Aarhus C, Denmark
Silicon nanocrystals are studied by time-resolved fluorescence spectroscopy. After laser excitation the bright and dark exciton ground state levels are populated at random, but subsequently the decay curves reveal a thermalization between these levels. The characteristic thermalization time is found to be approximately 100 ns for temperatures below 100 K and surprisingly increases for higher temperatures. The decay curves are analyzed using a simple two-state model for the bright and dark exciton ground states. ©2009 American Institute of Physics
History: Received 10 September 2009; accepted 30 September 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/183107/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.07.Bc
    Nanocrystalline materials: fabrication and characterization
  • 61.46.Hk
    Structure of nanocrystals
  • 71.35.-y
    Excitons and related phenomena
  • 78.55.Ap
    Photoluminescence in elemental semiconductors
  • 81.05.Cy
    Elemental semiconductors: fabrication, treatment, testing and analysis
  • 78.67.Bf
    Optical properties of nanocrystals and nanoparticles
  • 78.47.Cd
    Time-resolved luminescence in condensed matter
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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