Applied Physics Letters
Search:
   
 
 
 
Previous Article
Nonequilibrium dynamical ferromagnetism of interacting single-molecule magnets
We propose a nonequilibrium Monte Carlo (MC) approach to explore nonequilibrium dynamical ferromagnetism of interacting single molecule magnets (SMMs). Both quantum spin tunneling and thermally activa...
Next Article
High temperature stable monodisperse superparamagnetic core-shell iron-oxide@SnO2 nanoparticles
Monodisperse superparamagnetic SnO2-coated iron-oxide nanoparticles (~16.4  nm) have been synthesized via thermal decomposition. The thickness of SnO2 shells can be controlled from 1–5...

Effects of surface ligands on the charge memory characteristics of CdSe/ZnS nanocrystals in TiO2 thin film

Appl. Phys. Lett. 95, 183111 (2009); doi:10.1063/1.3259929

Published 6 November 2009

You are not logged in to this journal. Log in

Seung-Hee Kang,1 Ch. Kiran Kumar,1 Zonghoon Lee,2 Velimir Radmilovic,2 and Eui-Tae Kim1
1Department of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, Daejeon 305-764, Republic of Korea
2National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 72-150, Berkeley, California 94720, USA

Charge memory characteristics have been systematically studied based on colloidal CdSe/ZnS nanocrystal quantum dots (QDs) embedded in ~50  nm-thick TiO2 film. Ligand-capped QDs showed negligible electron charging effect, implying that the electron affinity of QDs was significantly decreased by surface dipole layer surrounding QDs. In contrast, the hole charging was affected by the carrier injection blocking effect of the surface ligands. Efficient electron and hole charging characteristics were realized by removing the surface ligands via H2 plasma treatment. ©2009 American Institute of Physics
History: Received 17 August 2009; accepted 19 October 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/183111/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (360 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 73.63.Kv
    Quantum dots (electronic transport)
  • 82.70.Dd
    Colloids
  • 72.20.-i
    Electrical conductivity phenomena in semiconductors and insulators
  • YEAR: 2010

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (13)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. A. P. Alivisatos, Science 271, 933 (1996).
  2. M. D. Fischbein and M. Drndic, Appl. Phys. Lett. 86, 193106 (2005).
  3. K. Mohanta, S. K. Majee, S. K. Batabyal, and A. J. Pal, J. Phys. Chem. B 110, 18231 (2006).
  4. Q. Sun, Y. A. Wang, L. S. Li, D. Wang, T. Zhu, J. Xu, C. Yang, and Y. Li, Nat. Photonics 1, 717 (2007).
  5. S. H. Kang, Ch. K. Kumar, Z. Lee, K. H. Kim, C. Huh, and E. T. Kim, Appl. Phys. Lett. 93, 191116 (2008).
  6. H. Borchert, D. V. Talapin, C. McGinley, S. Adam, A. Lobo, A. R. B. de Castro, T. Moller, and H. Weller, J. Chem. Phys. 119, 1800 (2003).
  7. I. H. Campbell and B. K. Crone, Appl. Phys. Lett. 92, 043303 (2008).
  8. E. Kucur, J. Riegler, G. A. Urban, and T. Nann, J. Chem. Phys. 119, 2333 (2003).
  9. G. Rothenberger, D. Fitzmaurice, and M. Graetzel, J. Phys. Chem. 96, 5983 (1992).
  10. U. Lunz, J. Kuhn, F. Goschenhofer, U. Schussler, S. Einfeldt, C. R. Becker, and G. Landwehr, J. Appl. Phys. 80, 6861 (1996).
  11. R. K. Swank, Phys. Rev. 153, 844 (1967).
  12. J. J. Lee, X. Wang, W. Bai, N. Lu, and D. L. Kwong, IEEE Trans. Electron Devices 50, 2067 (2003).
  13. C. H. Cho, B. H. Kim, T. W. Kim, S. J. Park, N. M. Park, and G. Y. Sung, Appl. Phys. Lett. 86, 143107 (2005).

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.