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Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates

Appl. Phys. Lett. 95, 183113 (2009); doi:10.1063/1.3258073

Published 6 November 2009

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T. Tanimura,1 S. Toyoda,1,2,3 H. Kamada,1 H. Kumigashira,1,2,3 M. Oshima,1,2,3 G. L. Liu,4 Z. Liu,4 and K. Ikeda4
1Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
2CREST of Japan Science and Technology Agency, Chiyoda-ku, Tokyo 102-0075, Japan
3Synchrotron Radiation Research Organization, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
4Semiconductor Technology Academic Research Center, Kohoku-ku, Kanagawa 222-0033, Japan
We have investigated the relationship between band alignment and chemical states in HfSiON/SiON stacked films on Si substrates by photoemission spectroscopy and x-ray absorption spectroscopy. Valence-band maxima mainly derived from N 2p states in HfSiON films are closely related to N–Hf bonding configurations. The valence-band offset for a thick HfSiON film is smaller than that for a thin HfSiON film, due to the amount of N–Hf bonding states. Since N–Hf bonding states decrease upon annealing, thickness dependence of valence-band offset can be eliminated. On the other hand, the conduction-band offset does not depend on either the thickness or annealing. ©2009 American Institute of Physics
History: Received 6 July 2009; accepted 11 October 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/183113/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.jd
    Thin film thickness
  • 79.60.Dp
    Photoelectron spectra of adsorbed layers and thin films
  • 81.40.Gh
    Other heat and thermomechanical treatments
  • 78.70.Dm
    X-ray absorption spectra (condensed matter)
  • 73.20.At
    Surface states, band structure, electron density of states
  • YEAR: 2010

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (17)
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  1. A. I. Kingon, J. -P. Maria, and S. K. Streiffer, Nature (London) 406, 1032 (2000).
  2. M. R. Visokay, J. J. Chambers, A. L. P. Rotandaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. 80, 3183 (2002).
  3. M. Koyama, A. Kaneko, T. Io, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi, and A. Nishiyama, Tech Dig. - Int. Electron Devices Meet 2002, 849.
  4. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
  5. Y. Kamimuta, M. Koike, T. Ino, M. Suzuki, M. Koyama, Y. Tsunashima, and A. Nishiyama, Jpn. J. Appl. Phys., Part 1 44, 1301 (2005).
  6. N. T. Barrett, O. Renault, P. Besson, Y. L. Tiec, and F. Martin, Appl. Phys. Lett. 88, 162906 (2006).
  7. R. Puthenkovilakam and J. P. Chang, J. Appl. Phys. 96, 2701 (2004).
  8. H. Y. Yu, M. F. Li, B. J. Cho, C. C. Yeo, M. S. Joo, D. L. Kwong, J. S. Pan, C. H. Ang, J. Z. Zheng, and S. Ramanathan, Appl. Phys. Lett. 81, 376 (2002).
  9. S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda, and K. Usuda, Appl. Phys. Lett. 87, 102901 (2005).
  10. S. Kamiyama, T. Miura, Y. Nara, and T. Arikado, Appl. Phys. Lett. 86, 222904 (2005).
  11. T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, and K. Usuda, Surf. Interface Anal. 40, 1606 (2008).
  12. Y. K. Kim, H. S. Lee, H. W. Yeom, D. -Y. Ryoo, S. -B. Huh, and J. -G. Lee, Phys. Rev. B 70, 165320 (2004).
  13. S. Horii, D. Ishikawa, A. Sano, Y. Imai, and Y. Kunii, Jpn. J. Appl. Phys., Part 1 46, 3229 (2007).
  14. G. Pant, A. Gnade, M. J. Kim, R. M. Wallace, B. E. Gnade, M. A. Quevedo-Lopez, P. D. Kirsch, and S. Krishnan, Appl. Phys. Lett. 89, 032904 (2006).
  15. T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, and Z. Liu, Appl. Phys. Lett. 92, 082903 (2008).
  16. T. Tanimura, H. Kamada, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda, Appl. Phys. Lett. 94, 082903 (2009).
  17. M. Koike, T. Ino, Y. Kamimuta, M. Koyama, Y. Kamata, M. Suzuki, Y. Mitani, and A. Nishiyama, Phys. Rev. B 73, 125123 (2006).

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