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Mechanistic investigation of ZnO nanowire growth

Appl. Phys. Lett. 95, 183114 (2009); doi:10.1063/1.3258074

Published 6 November 2009

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Simas Rackauskas,1 Albert G. Nasibulin,1 Hua Jiang,1 Ying Tian,1 Gintare Statkute,2 Sergey D. Shandakov,3 Harri Lipsanen,2 and Esko I. Kauppinen1,4
1Department of Applied Physics and Center for New Materials, NanoMaterials Group, Helsinki University of Technology, P.O. Box 5100, 02015 Espoo, Finland
2Department of Micro and Nanosciences, Micronova, Helsinki University of Technology, 02015 Espoo, Finland
3Department of Physics, Laboratory of Carbon NanoMaterials, Kemerovo State University, Kemerovo 650043, Russia
4VTT Biotechnology, Biologinkuja 7, 02044 Espoo, Finland
ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated. ©2009 American Institute of Physics
History: Received 5 August 2009; accepted 12 October 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/183114/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.16.-c
    Methods of nanofabrication and processing
  • 61.72.jd
    Vacancies (point defects)
  • 61.72.jj
    Interstitials
  • 66.30.Pa
    Diffusion in nanoscale solids
  • 61.72.Mm
    Grain and twin boundaries
  • 78.55.Et
    Photoluminescence in II-VI semiconductors
  • 81.05.Dz
    II-VI semiconductors: fabrication, treatment, testing and analysis
  • 81.07.-b
    Nanoscale materials and structures: fabrication and characterization
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (25)
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