Low voltage operation in picene thin film field-effect transistor and its physical characteristics
Appl. Phys. Lett. 95, 183302 (2009); doi:10.1063/1.3257373
Published 3 November 2009
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Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO2 gate dielectrics coated by two polymers, CytopTM and polystyrene. The picene FETs operated in low absolute gate voltage |VG| below 15 V for CytopTM coated SiO2 and 30 V for polystyrene coated SiO2 gate dielectrics, and they showed a significant O2 gas sensing effect down to ~10 ppm. Photoemission spectrum clarified that O2 molecules penetrate into the thin films at O2/picene mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated SiO2.
©2009 American Institute of Physics
| History: | Received 29 July 2009; accepted 8 October 2009; published 3 November 2009 |
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http://link.aip.org/link/?APPLAB/95/183302/1 |
KEYWORDS and PACS
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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