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Low voltage operation in picene thin film field-effect transistor and its physical characteristics

Appl. Phys. Lett. 95, 183302 (2009); doi:10.1063/1.3257373

Published 3 November 2009

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Yumiko Kaji,1 Naoko Kawasaki,1 Xuesong Lee,1 Hideki Okamoto,2 Yasuyuki Sugawara,3 Shohei Oikawa,3 Akio Ito,3 Hiroyuki Okazaki,1 Takayoshi Yokoya,1 Akihiko Fujiwara,4 and Yoshihiro Kubozono1
1Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan
2Division of Chemistry and Biochemistry, Okayama University, Okayama 700-8530, Japan
3Kuramoto Seisakusho Co., Ltd., Kurihara 989-5508, Japan
4Japan Advanced Institute of Science and Technology, Ishikawa 923-0062, Japan

Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO2 gate dielectrics coated by two polymers, CytopTM and polystyrene. The picene FETs operated in low absolute gate voltage |VG| below 15 V for CytopTM coated SiO2 and 30 V for polystyrene coated SiO2 gate dielectrics, and they showed a significant O2 gas sensing effect down to ~10  ppm. Photoemission spectrum clarified that O2 molecules penetrate into the thin films at O2/picene mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated SiO2. ©2009 American Institute of Physics
History: Received 29 July 2009; accepted 8 October 2009; published 3 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/183302/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 68.55.-a
    Thin film structure and morphology
  • 07.07.Df
    Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
  • 79.60.Dp
    Photoelectron spectra of adsorbed layers and thin films
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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