Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
Search:
   
 
 
 
Previous Article
Singlet energy transfer and singlet-singlet annihilation in light-emitting blends of organic semiconductors
Excitation energy transfer from host to guest is studied in spin-cast blends of 4,4-bis(N-carbazolyl)biphenyl (CBP) and a phosphorescent fac-tris(2-phenylpyridyl)iridium(III)-cored dendrimer using tim...
Next Article
Stable and reversible optoelectrical dual-mode data storage based on a ferrocenlylspiropyran molecule
A spiropyran molecule bonded with ferrocene (SPFc) was synthesized as data storage medium. Optical recording pattern was obtained through the reversible modulation of UV and visible light on the SPFc ...

Studies of charge transfer processes across donor-acceptor interface using a field effect transistor geometry

Appl. Phys. Lett. 95, 183306 (2009); doi:10.1063/1.3259629

Published 5 November 2009

You are logged in to this journal.

Manohar Rao and K. S. Narayan
Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560 064, India
The existence of donor-type polymer field effect transistors (FETs), which are FETs exhibiting p-type characteristics and acceptor-type molecular FETs with n-type characteristics, provide an interesting possibility of a combined active bilayer system, especially under photoexcitation. We present a device structure and methodology that is conducive to study donor-acceptor interfacial processes using a FET platform. The changes in FET characteristics initiated by the photogenerated carriers in the donor coated acceptor device are studied using steady state and pulsed photoexcitation. ©2009 American Institute of Physics
History: Received 9 June 2009; accepted 6 October 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/183306/1
FULL TEXT OPTIONS   (FREE)
Download HTML Download Sectioned HTML Download PDF (209 kB) View Cart

EPAPS

KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (17)
View in Separate Window/Tab
  1. S. H. Park, A. Roy, S. Beaupre, S. Cho, N. Coates, J. S. Moon, D. Moses, M. Leclerc, K. Lee, and A. J. Heeger, Nat. Photonics 3, 297 (2009).
  2. H. Xin, F. S. Kim, and S. A. Jenekhe, J. Am. Chem. Soc. 130, 5424 (2008). [MEDLINE]
  3. N. S. Sariciftci, L. Smilowitz, A. J. Heeger, and F. Wudl, Science 258, 1474 (1992). [Inspec] [ISI] [MEDLINE]
  4. A. C. Morteani, P. Sreearunothai, L. M. Herz, R. H. Friend, and C. Silva, Phys. Rev. Lett. 92, 247402 (2004). [MEDLINE]
  5. S. A. Jenekhe and J. A. Osaheni, Science 265, 765 (1994). [Inspec] [ISI] [MEDLINE]
  6. V. Podzorov and M. E. Gershenson, Phys. Rev. Lett. 95, 016602 (2005). [ISI] [MEDLINE]
  7. S. Barth, H. Bassler, H. Rost, and H. H. Horhold, Phys. Rev. B 56, 3844 (1997). [ISI]
  8. A. G. Manoj, A. A. Alagiriswamy, and K. S. Narayan, J. Appl. Phys. 94, 4088 (2003). [ISI]
  9. C. Waldauf, P. Schilinsky, M. Perisutti, J. Haush, and C. J. Brabec, Adv. Mater. 15, 2084 (2003). [ISI]
  10. K. H. Yim, Z. Zheng, Z. Lang, R. H. Friend, W. T. S. Huck, and J. S. Kim, Adv. Funct. Mater. 18, 1012 (2008).
  11. K. S. Narayan and N. Kumar, Appl. Phys. Lett. 79, 1891 (2001).
  12. T. P. I. Saragi, M. Fetten, and J. Salbeck, Appl. Phys. Lett. 90, 253506 (2007). [ISI]
  13. See EPAPS supplementary material at http://dx.doi.org/10.1063/1.3259629 for decay constants and transient measurement schematics. [EPAPS]
  14. S. Dutta and K. S. Narayan, Phys. Rev. B 68, 125208 (2003). [ISI]
  15. V. D. Mihailetchi, J. K. J. V. Duren, P. W. M. Blom, J. C. Hummelen, R. A. J. Janssen, J. M. Kroon, M. T. Rispens, W. J. H. Verhees, and M. J. Wienk, Adv. Funct. Mater. 13, 43 (2003). [Inspec] [ISI]
  16. P. A. C. Quist, T. J. Savenije, J. M. Schins, J. E. Kroeze, P. A. Rijkers, and L. D. A. Siebbeles, Phys. Rev. B 75, 195317 (2007).
  17. L. Tan, M. D. Curtis, and A. H. Francis, Chem. Mater. 16, 2134 (2004). [ISI]






Copyright © American Institute of Physics