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Trigonal paramagnetic interface defect in epitaxial Ge3N4/(111)Ge

Appl. Phys. Lett. 95, 183501 (2009); doi:10.1063/1.3237175

Published 3 November 2009

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A. P. D. Nguyen,1 A. Stesmans,1 V. V. Afanas'ev,1 R. R. Lieten,2 and G. Borgs2
1Department of Physics and Astronomy and INPAC-Institute for Nanoscale Physics and Chemistry, University of Leuven, Celestijnenlaan 200 D, 3001 Leuven, Belgium
2IMEC, Kapeldreef 75, 3002 Leuven, Belgium
We report on the observation by electron spin resonance (ESR) of an anisotropic paramagnetic defect at the interface of epitaxially grown Ge3N4/(111)Ge entities with nanometer thin Ge3N4 layers. The defect exhibits trigonal C3v symmetry characterized by g||[approximate]2.0023 and g[perpendicular][approximate]2.0032, and is observed most prominently after 10 eV optical excitation, with maximum areal density [approximate]2×1011  cm−2. The defect is suggested to concern the Ge K-type center, its occurrence appearing inherent to the specific heteroepitaxial interface matching. ©2009 American Institute of Physics
History: Received 10 July 2009; accepted 4 September 2009; published 3 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/183501/1
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KEYWORDS and PACS

Keywords
PACS
  • 76.30.Mi
    EPR of color centers and other defects
  • 68.55.Ln
    Thin film defects and impurities
  • 73.20.Hb
    Surface impurity and defect levels; energy states of adsorbed species
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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