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Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection

Appl. Phys. Lett. 95, 183502 (2009); doi:10.1063/1.3258489

Published 3 November 2009

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B.-M. Nguyen, S. Bogdanov, S. Abdollahi Pour, and M. Razeghi
Department of Electrical Engineering and Computer Science, Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208, USA
We present a hybrid photodetector design that inherits the advantages of traditional photoconductive and photovoltaic devices. The structure consists of a barrier layer blocking the transport of majority holes in a p-type semiconductor, resulting in an electrical transport due to minority carriers with low current density. By using the M-structure superlattice as a barrier region, the band alignments can be experimentally controlled, allowing for the efficient extraction of the photosignal with less than 50 mV bias. At 77 K, a 14  µm cutoff detector exhibits a dark current 3.3  mA/cm2, a photoresponsivity of 1.4 A/W, and the associated shot noise detectivity of 4×1010  Jones. ©2009 American Institute of Physics
History: Received 1 September 2009; accepted 14 October 2009; published 3 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/183502/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Gz
    Photodetectors
  • 72.20.Fr
    Low-field transport and mobility; piezoresistance (semiconductors/insulators)
  • 73.63.-b
    Electronic transport in nanoscale materials and structures
  • 72.40.+w
    Photoconduction and photovoltaic effects
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (15)
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