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Energy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure

Appl. Phys. Lett. 95, 183506 (2009); doi:10.1063/1.3243339

Published 5 November 2009

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Zilan Li,1,2 Michel Houssa,3 Tom Schram,1 Stefan De Gendt,1,4 and Kristin De Meryer1,2
1IMEC, Kapeldreef 75, Leuven, Leuven 3001, Belgium
2Department of Electrical Engineering, University of Leuven, Leuven 3001, Belgium
3Department of Physics, University of Leuven, Leuven 3001, Belgium
4Department of Chemistry, University of Leuven, Leuven 3001, Belgium
The energy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure is investigated. An analytical expression for the Fermi level of the metal stack is derived. It is shown that the thin metal layer contacting the gate dielectric plays a critical role in determining the work function of the whole metal stack, in agreement with experimental results. ©2009 American Institute of Physics
History: Received 17 April 2009; accepted 15 September 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/183506/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Qv
    Electrical properties of metal-insulator-semiconductor structures
  • 77.55.+f
    Dielectric thin films
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (12)
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