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Individual charge-trapping dislocations in an ionic insulator

Appl. Phys. Lett. 95, 184101 (2009); doi:10.1063/1.3259778

Published 5 November 2009

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Zhongchang Wang,1 Susumu Tsukimoto,1 Mitsuhiro Saito,1 and Yuichi Ikuhara1,2
1World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
2Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
Insulating oxide materials find widespread technological applications where how their inside dislocations behave are known to influence or control performance. Here we demonstrate, by first-principles calculations on MgO, that individual dislocations can trap charges within empty space around their cores in an unusual pipelike way, regardless of whether the charges are produced via external excitation or impurity doping. Such effect of dislocations is crucial for many applied physics issues as well as opens up an avenue for exploring functional devices based on the confined charges. ©2009 American Institute of Physics
History: Received 13 September 2009; accepted 16 October 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/184101/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.72.Bb
    Theories and models of crystal defects
  • 61.72.up
    Doping and impurity implantation in other materials
  • 71.15.-m
    Methods of electronic structure calculations (condensed matter)
  • 71.20.Ps
    Electronic structure of other crystalline inorganic compounds
  • YEAR: 2010

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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