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Hybrid InP-based photonic crystal lasers on silicon on insulator wires

Appl. Phys. Lett. 95, 201119 (2009); doi:10.1063/1.3265743

Published 20 November 2009

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Y. Halioua,1 T. J. Karle,1 F. Raineri,1 P. Monnier,1 I. Sagnes,1 G. Roelkens,2 D. Van Thourhout,2 and R. Raj1
1Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, 91460 Marcoussis, France
2Department of Information Technology, Photonics Research Group, Ghent University, B-9000 Ghent, Belgium
We report on InP-based photonic crystal lasers operating at 1.585  µm at room temperature, integrated with and evanescently coupled to silicon on insulator (SOI) waveguides. By optically pumping at 1.18  µm through the SOI wires, pulsed laser emission from line defect photonic crystal waveguides accurately aligned (<30  nm) to the silicon circuitry is demonstrated. ©2009 American Institute of Physics
History: Received 17 July 2009; accepted 22 October 2009; published 20 November 2009
Permalink: http://link.aip.org/link/?APPLAB/95/201119/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Semiconductor lasers; laser diodes
  • 42.55.Tv
    Photonic crystal lasers and coherent effects
  • 42.60.By
    Design of specific laser systems
  • YEAR: 2010

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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