Electronic structure of substitutional Mn in epitaxial In0.965Mn0.035Sb film
The magnetic and electronic structure of Mn in In0.965Mn0.035Sb ferromagnetic semiconductor thin film was studied by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. Comparison wit...
The magnetic and electronic structure of Mn in In0.965Mn0.035Sb ferromagnetic semiconductor thin film was studied by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. Comparison wit...
Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors
This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1...
This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1...
Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition
Appl. Phys. Lett. 95, 201906 (2009); doi:10.1063/1.3267101
Published 20 November 2009
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AlN/GaN superlattices (SLs) employing various well widths (from 1.5 to 7.0 nm) are grown by metal-organic chemical vapor deposition technique at various growth temperatures (TS) (from 900 to 1035 °C). The photoluminescence (PL), x-ray diffraction, and intersubband (ISB) absorption characteristics of these SLs and their dependency on well width and growth temperature are investigated. Superlattices with thinner wells (grown at the same TS) or grown at lower TS (employing the same well width) are shown to demonstrate higher strain effects leading to a higher PL energy and ISB absorption energy. Simulations are employed to explain the experimental observations. ISB absorptions from 1.04 to 2.15 µm are demonstrated via controlling well width and growth temperature.
©2009 American Institute of Physics
| History: | Received 1 September 2009; accepted 3 November 2009; published 20 November 2009 |
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